2N5323

Series:	--
Packaging:	Bulk
Part Status:	Obsolete
Transistor Type:	PNP
Current - Collector (Ic) (Max):	2A
Voltage - Collector Emitter Breakdown (Max):	50V
Vce Saturation (Max) @ Ib, Ic:	1.2V @ 50mA, 500mA
Current - Collector Cutoff (Max):	--
DC Current Gain (hFE) (Min) @ Ic, Vce:	40 @ 500mA, 4V
Power - Max:	10W
Frequency - Transition:	--
Operating Temperature:	--
Mounting Type:	Through Hole
Package / Case:	TO-205AA, TO-5-3 Metal Can
Supplier Device Package:	TO-5
Base Part Number:	2N5323

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Introduction

2N5323 is a PNP type of peripheral Bipolar Junction Transistor (BJT). This transistor is generally used in saturable reactor power supply circuits and power switching applications. It has a high current gain and its hogh breakdown voltage makes 2N5323 a reliable device for usage in high power DC/DC converters.

Configuration

2N5323 consists of three layers of semiconductor material. It is made of two layers of N-type semiconductor material and one layer of P-type material. The N-type layers are the emitter and collectors while the P-type region is the base. This transistor is a NPN type which means that when current is supplied to the base, the transistor switches from an ‘off’ state to an ‘on’ state.

Application Field

2N5323 is usually used as a current amplifier in power switching applications such as DC/DC converters, saturable reactor power supplies and control circuits. It is also well suited for applications that require a high current gain, a relatively high breakdown voltage and a low on-state voltage drop.

Working Principle

2N5323 works on the principle of minority carriers injection. It is a three terminal device with the base, collector and emitter. When small base current is applied to the base terminal, it exerts control over the current flowing between the collector and emitter terminals. When a voltage is applied to this terminal, it injects minority carriers into the base region which in turn creates a voltage drop across the collector-emitter terminals, resulting in current amplification.

Advantages

2N5323 is a reliable device for power switching applications due to its wide voltage operating range and high current gain. It also has a very low on-state voltage drop which makes it suitable for high power applications. Additionally, its excellent breakdown voltage makes it robust and reliable.

Conclusion

2N5323 is a PNP type of peripheral Bipolar Junction Transistor (BJT) which is most commonly used in power switching applications such as DC/DC converters, saturable reactor power supplies and control circuits. It has a high current gain and its hogh breakdown voltage makes 2N5323 a reliable device for usage in high power DC/DC converters. 2N5323 works on the principle of minority carriers injection and due to its wide voltage operating range and high current gain, it is the most preferred transistor for high power applications.

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