Allicdata Part #: | 2N5770_D26Z-ND |
Manufacturer Part#: |
2N5770_D26Z |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANSISTOR RF NPN 15V 50MA TO-92 |
More Detail: | RF Transistor NPN 15V 50mA 350mW Through Hole TO-... |
DataSheet: | 2N5770_D26Z Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 15V |
Frequency - Transition: | -- |
Noise Figure (dB Typ @ f): | 6dB @ 60MHz |
Gain: | 15dB |
Power - Max: | 350mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 50 @ 8mA, 10V |
Current - Collector (Ic) (Max): | 50mA |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | 2N5770 |
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2N5770_D26Z Application Field and Working Principle
The 2N5770_D26Z is a type of bipolar junction transistor (BJT), classified as a radio frequency (RF) type. This type of transistor is designed to efficiently amplify signals in the frequency range of approximately 0.3 MHz to 300 MHz.
The 2N5770_D26Z is usually used in applications such as amplifiers and oscillators, where its performance is superior to other BJTs. This type of transistor has a low noise, high frequency response, and low distortion.
Features and Benefits
- It has a high maximum frequency of up to 300 MHz.
- Extremely low distortion and noise, making it ideal for audio and other sensitive applications.
- Requires low current for operation, which helps to reduce losses and increase efficiency.
- Good gain stability, meaning it will continue to have good performance even when subjected to variations in temperature and voltage.
Working Principle
The 2N5770_D26Z is a bipolar junction transistor (BJT). It is composed of two sections, the emitter and the base, that are separated by a single pn junction. The base is connected to a separate terminal, providing two independent current paths between the emitter and the collector.
When voltage is applied to the base, it causes electrons to flow from the emitter to the base region, allowing current to flow from the base to the collector. This current flow is amplification of the input signal at the base. The current through the collector is also determined by the base-emitter voltage and the collector current is controlled by the base current.
This amplification of the input signal, along with the low current requirements, makes the 2N5770_D26Z ideal for use in audio and other sensitive applications. Furthermore, the low noise, high frequency response, and low distortion make it ideal for use in amplifiers and oscillators.
Applications
Due to its highly efficient performance, the 2N5770_D26Z is suitable for a range of applications, such as:
- Amplifier circuits
- Oscillators
- RF receivers and transmitters
- Filters
- Audio amplifiers
- High frequency rectifiers
- High frequency switching circuits
- High speed logic circuits
- Computer memory circuits
Conclusion
The 2N5770_D26Z is a highly efficient bipolar junction transistor designed specifically for use as an RF type transistor. Its ratings include a maximum frequency of up to 300 MHz, low distortion and noise, and low current requirements. With its impressive features and performance, it is suitable for a wide range of applications, including amplifiers, oscillators, filters, audio amplifiers, and high speed logic circuits.
The specific data is subject to PDF, and the above content is for reference
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