2N5793

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The 2N5793 is a bipolar transistor array released by Motorola (now ON Semiconductor) in 1970. It’s a NPN-type dual monolithic device containing two transistors. The transistors are isolated by a third electrode and a fourth electrode is available as a bias style emitter. This device is classified as a type of Bipolar Junction Transistors (BJT) array.

The 2N5793 can be used as an amplifier in a wide range of applications, from audio to RF signals. It can also be used in the power supply of many popular circuit designs such as audio amplifiers, computers and other audio-visual equipment. In addition, it can be employed for power supply regulation given its ability to withstand high input voltages up to 400V.

The principle of operation of the 2N5793 is based on semiconductor materials such as silicon. It works when electricity passes through a semi-conductor, allowing the transfer of electrical impulse or energy between the collector, base and emitter. During that process, the load is connected between the emitter and the collector of the transistor so that the current flows through the load.

When a voltage is applied to the base of the transistor (connecting it to the collector and emitter), a small fraction of the current passes through the base-emitter junction. This current then amplifies the circuit. If a higher voltage is applied, the current passing through the base-emitter junction increases, further amplifying the circuit. The resistance to current passing through the base-emitter junction is known as the transistors ratio and it is the reason why transistors are used for amplification. The ratio is determined by the size of the transistor’s base and its geometry.

The 2N5793 offers excellent performance, reliability and value and is an ideal choice for a wide variety of applications. It is suitable for use in many types of amplifier designs and can be used with a wide range of frequencies. The device operates over a wide temperature range and can be used in a variety of industrial and consumer applications. It is also popular due to its immunity to noise.

In summary, the 2N5793 is a Bipolar Junction Transistors (BJT) array produced by ON Semiconductor. It is designed for a variety of applications, and its principal operation is based on semiconductor materials. It provides excellent performance, reliability and value, and it is an ideal choice for audio, RF signal and power supply regulation applications.

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