2N5771_D26Z

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	PNP
Current - Collector (Ic) (Max):	200mA
Voltage - Collector Emitter Breakdown (Max):	15V
Vce Saturation (Max) @ Ib, Ic:	600mV @ 5mA, 50mA
Current - Collector Cutoff (Max):	10nA
DC Current Gain (hFE) (Min) @ Ic, Vce:	50 @ 10mA, 300mV
Power - Max:	350mW
Frequency - Transition:	--
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package:	TO-92-3
Base Part Number:	2N5771

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.<p>The 2N5771_D26Z is a single-bipolar transistor (BJT) designed as a reliable, high-performance component. It is used in many applications requiring small machines, tools, and general-purpose transistors. In addition, it can be used for relay, switch, and servo motor control, as well as circuits for switching circuits and audio amplification. The 2N5771_D26Z offers excellent performance in terms of its high current driving capability, high switching frequency, and low on-state resistance.</p><p>The 2N5771_D26Z is a PNP transistor composed of two N-type and one P-type semiconductor to form a monolithic structure. It has three pins: a base, an emitter, and a collector. The base connects to a current supply, while the emitter passes current to the collector. The collector is connected to a load. Generally, the 2N5771_D26Z is used in small and medium-power applications such as general purpose switching joints, low-noise amplifiers, level and voltage regulators, switching circuits, switch control systems, and mechanical actuators.</p><p>The working principle of the 2N5771_D26Z is based on the movement of electrons inside the transistor. When forward bias is applied to the base-emitter junction, electrons are attracted to the base region and move to the collector. This in turn generates a collector current (I&#65815;C) that is amplified by the transistor’s current gain (&#956;). The current gain is the ratio of the collector current (I&#65815;C) to the base current (I&#65815;B).</p><p>The main characteristics of the 2N5771_D26Z include high-current gain (hFE), low noise level, higher switching frequency, and low on-state resistance (RDS). In addition, the transistor has a very low leakage current and is capable of operating in harsh environment conditions. The gain of the transistor depends on the current gain and the collector-emitter voltage (V&#65815;CE). It also has a good thermal characteristics, allowing it to remain stable even when operating at high temperatures.</p><p>In conclusion, the 2N5771_D26Z is a high-performance single-bipolar transistor ideal for many applications requiring small machines, tools, and general-purpose transistors. It has excellent current gain, low noise level, higher switching frequency, and low on-state resistance. The device is also capable of operating under high temperatures, making it suitable for use in harsh environment conditions.</p>

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