Allicdata Part #: | 2N5772-ND |
Manufacturer Part#: |
2N5772 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 15V 0.3A TO-92 |
More Detail: | Bipolar (BJT) Transistor NPN 15V 300mA 350mW Thro... |
DataSheet: | 2N5772 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 300mA |
Voltage - Collector Emitter Breakdown (Max): | 15V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 3mA, 300mA |
Current - Collector Cutoff (Max): | 500nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 30 @ 30mA, 400mV |
Power - Max: | 350mW |
Frequency - Transition: | -- |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | 2N5772 |
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The 2N5772 is a single bipolar junction transistor (BJT) with a low-power PNP type. It is often used for linear amplification and switching applications. This device is often used in trade applications such as amplifiers for mobile phones, battery powered amplifiers, and low-voltage amplifiers. It is also used in power network applications such as low-power amplifiers, low-noise amplifiers, and voltage regulators. The 2N5772 can also be used in digital circuits such as NAND gates, OR gates, and flip flops.
This single bipolar junction transistor has been designed to meet rigid performance and reliability specifications. It is fabricated with an epitaxial planar process technology that makes it capable of providing good linearity at low power levels. The package size is TO-92, which is a three-lead package that can fit on any printed circuit board. The 2N5772 has a low saturation voltage and a high current gain, and it is capable of switching frequencies up to 100 kHz.
The 2N5772 operates through two main principles. One is electron holes, which are the negative charges produced by the acceleration of electrons, and the other is the base-collector-emitter junction that occurs when electrons move from the base to the collector. The base-collector-emitter junction is created by the addition of special materials to the substrate layer. The combination of the electron holes and the base-collector-emitter junction produce the gate voltage that is necessary to control the current flow in the transistor. This gate voltage can be adjusted to alter the characteristics of the device.
The 2N5772 is capable of operating at up to 25 volts. It also has a low saturation voltage and an input current of up to 10 milliamps. This device has a maximum base-emitter voltage of 6 volts, which makes it suitable for use in low- voltage applications. Furthermore, the 2N5772 has a high current gain, meaning it is well-suited for high current applications. Finally, the 2N5772 is well-suited for digital switching applications since it has a maximum switching frequency of 100 kHz.
The 2N5772 is a low-power PNP type bipolar junction transistor that is capable of meeting rigid performance and reliability specifications. It has a TO-92 package size and can be used in a variety of applications such as power network and linear amplification. It is also capable of operating at up to 25 volts, has a low saturation voltage and an input current of up to 10 milliamps. Finally, it has a high current gain and a maximum switching frequency of 100 kHz, making it suitable for digital switching applications.
The specific data is subject to PDF, and the above content is for reference
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