2N5796 Allicdata Electronics

2N5796 Discrete Semiconductor Products

Allicdata Part #:

2N5796-ND

Manufacturer Part#:

2N5796

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Central Semiconductor Corp
Short Description: TRANS 2PNP 600MA 60V TO78-6
More Detail: Bipolar (BJT) Transistor Array 2 PNP (Dual) 60V 60...
DataSheet: 2N5796 datasheet2N5796 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: 2 PNP (Dual)
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: --
Current - Collector Cutoff (Max): --
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 600mW
Frequency - Transition: 200MHz
Operating Temperature: --
Mounting Type: Through Hole
Package / Case: TO-78-6 Metal Can
Supplier Device Package: TO-78-6
Description

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The 2N5796 is a PNP Darlington array, or a multi-transistor package consisting of three integrated transistors. As a discrete Darlington array, it is made up of two individual NPN transistors each connected to a single PNP transistor; all three transistors are linked to a single collector. This configuration enhances current gain, making the 2N5796 suitable for a variety of application fields. Among its most common uses are motor control, consumer electronic equipment, and AC/DC power conversion processes.

The 2N5796 utilizes the principle of bipolar junction transistors (BJTs). A BJT resembles a type of semiconductor diode, where two regions of a semiconductor material sit at the base of the device. These two regions are the emitter and the collector. A BJT can have an NPN or PNP configuration, where the base terminal is used to control the current flow between the two regions. The two semiconductor materials can either be connected, separated or partially connected. The Darlington configuration of the 2N5796 creates a significantly large current gain through both transistors, resulting in a much high output than would be achieved using a single transistor.

The 2N5796 is designed to operate within a wide range of collector-emitter (VCE) and collector-base (VCB) voltages, allowing it to be used in a variety of working environments. For optimal performance, certain parameters such as operating current and collector-emitter saturation voltage should be maintained within pre-determined ranges. Generally, VCE should be between 10 and 40 volts and the current should be limited to between 0.2 and 100 milliamps (mA). Furthermore, the collector-emitter saturation voltage should also be kept below 3V.

These features make the 2N5796 a suitable semiconductor device for high-performance motor control, consumer electronic equipment and AC/DC power conversion processes. The device’s wide range of operating conditions is also well-suited for applications outside these fields such as power switching, motor switching and other medium-voltage applications. The 2N5796 is further enhanced by its minimal size which allows it to be used in highly compact circuits.

In summary, the 2N5796 is a PNP 3-transistor array, based on the Darlington configuration to create a high current gain. This device is well suited for a variety of application fields such as motor control, consumer electronic equipment, and AC/DC power conversion processes. The 2N5796 also benefits from its wide range of collector-emitter and collector-base voltages, allowing it to be used in a variety of working environments. Thanks to its minimal size, the 2N5796 is also useful in a variety of other applications.

The specific data is subject to PDF, and the above content is for reference

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