Allicdata Part #: | 2N6107GOS-ND |
Manufacturer Part#: |
2N6107G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 70V 7A TO220AB |
More Detail: | Bipolar (BJT) Transistor PNP 70V 7A 10MHz 40W Thro... |
DataSheet: | 2N6107G Datasheet/PDF |
Quantity: | 3168 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 7A |
Voltage - Collector Emitter Breakdown (Max): | 70V |
Vce Saturation (Max) @ Ib, Ic: | 3.5V @ 3A, 7A |
Current - Collector Cutoff (Max): | 1mA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 30 @ 2A, 4V |
Power - Max: | 40W |
Frequency - Transition: | 10MHz |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Base Part Number: | 2N6107 |
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2N6107G transistor is a NPN silicon epitaxial transistor manufactured by STMicroelectronics. It belongs to the Bipolar (BJT) Single category of transistors. It is mainly used in the power field, such as in television sets, audio equipment, and communication equipment.The 2N6107G transistor is designed to operate in low voltage and power applications. It has a high common-mode rejection ratio. It also has a high current gain and low noise characteristics. The 2N6107G also offers good energy efficiency, making it a good choice for power applications. The 2N6107G transistor is a bipolar junction transistor (BJT). It is essentially composed of three layers of semiconductor material, each layer having its own level of doping. The layers form a structure known as a base, collector and emitter. The base layer is the most lightly doped. It controls the current flow, and is the layer which receives input signals. The collector layer is more heavily doped and controls the quantity of current flow. The emitter is the most heavily doped layer, and controls the output current.The main working principle of the 2N6107G transistor is based on the movement of electrons and holes. An electric current is passed through the base layer which changes the electrical potential between the collector and the emitter layer. This results in the opening and closing of the transistor, thus allowing or preventing current flow to the emitter. The 2N6107G transistor is mainly used in power applications. It can be used to increase or decrease the amount of current flowing through a circuit. It can also be used to switch electronic signals and can be used for amplifying electronic signals. This type of transistor is also used in voltage regulators and motor control circuits. 2N6107G transistors have a wide range of applications in the power field. For example, they can be used as power switching devices, as well as in audio and video equipment, switching systems, and voltage regulators. They are also suitable for use in computers and other digital devices. In conclusion, the 2N6107G transistor is an excellent choice for power applications. It has a high common-mode rejection ratio, a high current gain, and low noise characteristics. It can be used for a wide range of applications, including audio and video equipment, motor control circuits, switching systems, and voltage regulators.
The specific data is subject to PDF, and the above content is for reference
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