Allicdata Part #: | 2N6192-ND |
Manufacturer Part#: |
2N6192 |
Price: | $ 11.50 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | PNP POWER TRANSISTOR SILICON AMP |
More Detail: | Bipolar (BJT) Transistor |
DataSheet: | 2N6192 Datasheet/PDF |
Quantity: | 1000 |
100 +: | $ 10.45830 |
Series: | * |
Part Status: | Active |
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2N6192 is a general-purpose Silicon NPN power transistor, featuring high voltage and current capabilities, low collector-emitter saturation voltages, and low off-state leakage current. It is suitable for high voltage switching/amplifying applications, such as motor control, switch-mode power supplies, DC-DC converter and AC regulator circuit.
The 2N6192 is a NPN bipolar junction transistor. It is formed by a N-type semiconductor material between source and drain, which are connected to a layer of P-type semiconductor material at the base. The BJT is a four terminal device with the terminals being named base (B), collector (C), emitter (E). Here, electrons can flow from the emitter to the collector and holes can flow from the emitter to the base, when a small base current is supplied.
Here, the 2N6192 application is defined by its specification in terms of voltage, current and power ratings. This transistors can withstand up to an unknown maximum of 150 Volts and has a collector current of 10 A and power dissipation of 199 watts. The operating junction temperature range is from -55 °C to +150 °C and its storage temperature range is from -65 °C to +150 °C.
The working principle of the 2N6192 is based on a fundamental property of the semiconductor material, where a voltage applied to a junction of two different types of semiconductor materials can cause current to flow across the junction. In the case of this 2N6192, this occurs when a voltage is applied to the base-collector junction, while the emitter is grounded. The voltage across this junction causes current to flow from collector to base, while current from the emitter to the base, causes current to flow from emitter to collector. The current flow is controlled by the base current. Thus, the voltage drop across the collector-base junction is related to the amount of current flowing from the base to the collector.
The 2N6192 is widely used in electronic devices for motor control, such as in automobiles, appliances and toys. They are also used in AC regulators, switch-mode power supplies, and DC-DC converters. The transistor also provides isolation for protection against over-heating and over-current conditions. It has high current gain and low saturation voltage.
In summary, the 2N6192 is a NPN bipolar junction transistor with high voltage, current and power ratings. It is suitable for high voltage switching/amplifying applications. The transistor is used in motor control applications, AC regulators, switch-mode power supplies, and DC-DC converters. It has a low collector-emitter saturation voltage and low off-state leakage current, and high current gain. The working principle of the 2N6192 is based on the property of a semiconductor material, which allows current to flow across the junction when a voltage is applied to it.
The specific data is subject to PDF, and the above content is for reference
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