2N6123

Series:	--
Packaging:	Tube
Part Status:	Active
Transistor Type:	NPN
Current - Collector (Ic) (Max):	4A
Voltage - Collector Emitter Breakdown (Max):	80V
Vce Saturation (Max) @ Ib, Ic:	1.4V @ 1A, 4A
Current - Collector Cutoff (Max):	1mA
DC Current Gain (hFE) (Min) @ Ic, Vce:	20 @ 1.5A, 2V
Power - Max:	40W
Frequency - Transition:	2.5MHz
Operating Temperature:	-65°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-220-3
Supplier Device Package:	TO-220

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2N6123 Application Field and Working Principle

2N6123 is a type of single bipolar junction transistor (BJT). It is a type of semiconductor device that consists of three terminals, namely an emitter, a base, and a collector. It controls the flow of electrons through an alternating current circuit. It is mainly used in linear amplifiers and switching circuits, especially when high power handling is required.

Features of 2N6123

The 2N6123 is a silicon NPN transistor that has a maximum collector-emitter voltage of 400V and a maximum collector current of 4A. It has a minimum gain of 40 at 5V and a maximum gain of 200 at 2.5V. It has a low collector-emitter saturation voltage of 300mV and a high reverse voltage of 12V. It has a high-power dissipation of 25W and a package power dissipation of 100W. It has an operating temperature range of -55°C to +150°C and a storage temperature range of -65°C to +150°C.

Application Fields

The 2N6123 is mainly used in power switching applications and power amplifiers, as well as in medical equipment, automotive electronics, and consumer electronics. It is commonly used in linear amplifiers, power converters, power MOSFET drivers, high-voltage switching applications, and high voltage relay circuits. It can also be used in audio and radio frequency (RF) amplification and modulation.

Working Principle

The 2N6123 works by controlling the flow of electrons in an alternating current circuit. When an electrical signal is applied to the base, it controls the number of electrons flowing from the emitter to the collector. This creates a voltage variation at the collector, which is then amplified and applied to the load. The gain or amplification factor is determined by the ratio of collector current to the base current. The 2N6123 also has a very low saturation voltage, which reduces conduction losses and increases power efficiency.

Advantages

The 2N6123 is capable of handling high power, making it a good choice for linear amplifiers and switching applications. Additionally, it has a low collector-emitter saturation voltage and a high reverse voltage rating, which reduces conduction losses and improves power efficiency. It also has a wide temperature range, making it suitable for use in extreme temperature environments.

Disadvantages

One of the main disadvantages of 2N6123 is its relatively high input capacitance. This means that the transistor is unable to switch quickly and is not suitable for high frequency applications. The 2N6123 also has a relatively high gain, which reduces the efficiency of the power amplifier.

Conclusion

The 2N6123 is a type of single bipolar junction transistor that mainly used in linear amplifiers and switching applications. It is capable of handling high power and can be used in extreme temperature environments. It also has a low collector-emitter saturation voltage and a high reverse voltage rating. However, it has a relatively high input capacitance and a high gain which may reduce the efficiency of the power amplifier.

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