2N6111G Allicdata Electronics
Allicdata Part #:

2N6111GOS-ND

Manufacturer Part#:

2N6111G

Price: $ 0.64
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP 30V 7A TO220AB
More Detail: Bipolar (BJT) Transistor PNP 30V 7A 10MHz 40W Thro...
DataSheet: 2N6111G datasheet2N6111G Datasheet/PDF
Quantity: 682
1 +: $ 0.58590
10 +: $ 0.51471
100 +: $ 0.39482
500 +: $ 0.31210
1000 +: $ 0.24968
Stock 682Can Ship Immediately
$ 0.64
Specifications
Series: --
Packaging: Tube 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 7A
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 3.5V @ 3A, 7A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3A, 4V
Power - Max: 40W
Frequency - Transition: 10MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Base Part Number: 2N6111
Description

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2N6111G Application Field and Working Principle

Transistors are electronic components that can act as switches or amplifiers. Transistors are divided into various families of components, including Bipolar Junction Transistors or BJT, Field-Effect Transistors or FET, and Unijunction Transistors or UJT. In the BJT family, transistors can be further divided into single- and dual-chip varieties, and of these two, the 2N6111G is a representative of the single-chip BJT family.

Application Fields of 2N6111G BJT

The 2N6111G has a range of application fields, such as high-current switching, conversion of electrical and thermal power, and on-chip biasing for analog and digital circuits. This high-performance transistor is considered a more-versatile device due to its ability to operate in either switching or amplification operations, enabling it to be used in DC, AC, and high-frequency applications. Applications of the 2N6111G include low-noise amplifiers, linear voltage regulators, audio amplifiers, line drivers, and frequency discriminators.

Functional Characteristics

The 2N6111G consists of three terminals, a base (B), collector (C) and emitter (E). The 2N6111G is biased by an external electric field, known as \'reverse bias\', which when applied (usually with an external source like a battery or a voltage generator) causes an unequal distribution of charge carriers. The application of a potential difference then affects a resistance within the transistor, allowing current to flow through the collector and emitter.

Working Principle

The 2N6111G works on the principle of a p-n junction. A p-n junction is created by two types of doped semiconductor materials, one p-type, and one n-type, having opposite charges placed in close proximity to each other. A bias voltage is applied to the base terminal of the transistor, which controls the current flow between the collector and emitter terminals. This current is then used to control the circuit to which it is connected.

Advantages and Disadvantages of 2N6111G

The 2N6111G provides many advantages over other types of transistor. For example, it is suitable for use in high-current switching and higher-frequency oscillator applications as it can support even higher currents than many other transistors. In addition, it has a high current gain, allowing for a low base drive current to be used for higher level of amplification. One of the primary disadvantages of the 2N6111G is that it cannot handle reverse currents, and this has to be taken into consideration when selecting a transistor for a particular application.

Conclusion

The 2N6111G transistor is a great example of a single-chip BJT device. Its ability to support higher currents, higher current gains, and its wide range of application fields allow engineers to use it as a reliable device for a variety of applications. Its disadvantages, such as the inability to handle reverse currents, must be taken into account before it is selected for a specific application.

The specific data is subject to PDF, and the above content is for reference

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