2PA1576Q,115

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The 2PA1576Q is a bipolar junction transistor (BJT) of the single type. It is designed to be used in the fields of consumer electronics, automotive electronics and professional laboratory equipment, among others. It is a highly reliable device, characterized by a fast and efficient switching speed, low thermal resistance and excellent ESD protection.

Introduction

The 2PA1576Q is a high-speed low-power slotted bipolar junction transistor (BJT), designed to be used in consumer electronics, automotive electronics, professional laboratory equipment and other similar electronics equipment fields. It is capable of withstanding voltage surges of up to 125 V and is classified at a collector current of over 200 mA. This transistor offers excellent properties of fast switching at a low thermal resistance and a wide range of supply voltages. In addition, it is made with an efficient substrate integrated ESD protection to reduce the chances of transients damaging the device.

Features

The 2PA1576Q is an NPN transistor with an operating temperature range from -55° C to 150° C. It has a maximum collector current of 200 mA, a collector-base voltage of 125 V and an emitter-base voltage of 5 V. It has a forward voltage drop at the collector-emitter transition of 0.7 V and a DC current gain of 800. It is capable of sustaining surge currents as high as 5 A.

Applications

The 2PA1576Q is typically used in consumer electronics, automotive electronics, professional laboratory equipment and other similar electronic equipment fields. Some of the possible applications of this transistor are power control and display, motor control, audio and signal switching, signal amplification, signal trimming and HV switching. Due to its robust construction and reliability, it is also suitable for use in harsh environments.

Working Principle

The 2PA1576Q is a NPN bipolar junction transistor (BJT). This type of transistor functions as an amplifying or switching device. The current at the emitter-base junction is controlled by the voltage present on the collector-base junction and this current is in turn amplified at the collector-emitter junction. The increase in current at the collector-emitter junction is due to the current flowing through the base of the transistor and the resistance of the collector-emitter junction. This process is known as current amplification and is the primary function of a BJT.

Conclusion

The 2PA1576Q is a high-speed low-power slotted bipolar junction transistor (BJT) designed for use in a variety of fields including consumer electronics, automotive electronics, professional laboratory equipment and other similar electronics equipment. This transistor is characterized by its fast switching speed, low thermal resistance, wide range of supply voltages, and reliable ESD protection. It is suitable for use in harsh environments and is capable of sustaining surge currents of up to 5 A. Its primary function is current amplification, and it is capable of achieving a considerable gain in current through the collector-emitter junction.

The specific data is subject to PDF, and the above content is for reference