2PA1576R/ZLX Allicdata Electronics
Allicdata Part #:

2PA1576R/ZLX-ND

Manufacturer Part#:

2PA1576R/ZLX

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: NXP USA Inc
Short Description: TRANS PNP GEN PURPOSE SC70
More Detail: Bipolar (BJT) Transistor Surface Mount SOT-32...
DataSheet: 2PA1576R/ZLX datasheet2PA1576R/ZLX Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: *
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323-3
Description

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2PA1576R/ZLX is a type of single bipolar junction transistor (BJT) which offers a wide range of uses in both low and high power applications. It is a good choice for low power designs, due to its low voltage rating (at 50V) and very small size. It is also very resistant to thermal runaway, making it ideal for high power applications, such as motor control and other high current applications.

A single transistor is composed of three different layers – emitter, base, and collector – separated by thin layers of an insulating material. Charge carriers (electrons and holes) diffuse across the junction between the emitter and the base and then they accumulate in an area around the collector, where they contribute to the dynamic behavior that\'s characteristic of transistors.

2PA1576R/ZLX uses n-type silicon, which allows electrons to flow freely and the very thin base layer of 1.7 µm, for some of the fastest switching times. It also features a low voltage, 30V, for low power applications. The maximum collector current for the 2PA1576R/ZLX is 5A and the maximum power dissipation rating is 18W. It can handle a maximum junction temperature of 175°C, as well as a maximum storage temperature of 200°C.

The 2PA1576R/ZLX is commonly used in low and high power applications, such as radio-frequency (RF) and direct-current (DC) amplification, switching, and linear and DC motor control. Because of its low voltage and fast switching, it is suitable for the design of power circuits with very low voltages and currents.

The working principle of the 2PA1576R/ZLX is based on the p-n junction. The emitter-base region serves as the input, while the collector-base region serves as the output region. When a positive voltage is applied to the base, holes diffuse from the base to the emitter and allow electrons to reach the collector. This in turn creates current in the collector-emitter circuit, meaning that the larger the voltage applied to the base, the greater the current produced.

Because of the wide range of applications that the 2PA1576R/ZLX is suitable for, it is a popular choice for many power circuits. With its low voltage and maximum current rating, it is well suited for both low-voltage and high-current designs. It is also known for its fast switching times, making it a great choice for RF and DC control circuits. It is also very resistant to thermal runaway, which further contributes to its usefulness in power applications.

The specific data is subject to PDF, and the above content is for reference

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