Allicdata Part #: | 2PA1774R,135-ND |
Manufacturer Part#: |
2PA1774R,135 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | TRANS PNP 50V 0.15A SC-75 |
More Detail: | Bipolar (BJT) Transistor PNP 50V 150mA 100MHz 150m... |
DataSheet: | 2PA1774R,135 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 150mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Vce Saturation (Max) @ Ib, Ic: | 200mV @ 5mA, 50mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 180 @ 1mA, 6V |
Power - Max: | 150mW |
Frequency - Transition: | 100MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SC-75, SOT-416 |
Supplier Device Package: | SC-75 |
Base Part Number: | 2PA1774 |
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The 2PA1774R,135 is a type of single bipolar junction transistor (BJT) that functions as a three-terminal electronic device. The three terminals are the base, the collector and the emitter. All BJTs are either NPN or PNP types. In the case of the 2PA1774R,135, it is an NPN type bipolar transistor. A typical NPN BJT has the common emitter configuration, whereby the emitter is connected to ground, the base is connected to the power source, and the collector receives the output.
BJTs are mainly used as electrically controlled switches for large current or voltage applications. It is also used for amplifying electronic signals, forming feedback circuits and for switching applications. The working principle behind BJTs is a lot like that of a mechanical switch. When no current is applied to the base, the transistor is turned off. When a current is applied to the base, the transistor is turned on. This action is caused by the current that passes through the base-emitter junction, resulting in a voltage drop across the junction.
The 2PA1774R,135 is mainly used for power supply regulators, voltage converters, and audio amplifiers or other circuits that require high current switching or power controlling. This device is designed with slow transition time, low voltage and low trigger current characteristics, making it ideal for use as an effective power regulating device.
This type of BJT also has a high current gain, enabling reliable and efficient function. With proper configuration, the current gain of the 2PA1774R,135 can reach up to 400mA/V. In addition, the device has a low on-state resistance with a minimum value between 2.8Ω and -3.5Ω, resulting in minimal power loss. This type of BJT can also withstand high power dissipation of up to 130W.
Another useful feature of the 2PA1774R,135 is its ability to operate in extreme temperature conditions. This device can safely function in temperatures ranging from -55°C up to 175°C. This makes it suitable for applications in harsh and extreme environments.
The 2PA1774R,135 is a single, NPN type BJT that is a popular choice for power controlling and amplifying applications. It is equipped with useful features including high current gain, low voltage and low trigger current characteristics, as well as low on-state resistance. This device\'s ability to operate in extreme temperature conditions also makes it an ideal choice for harsh or extreme environments, making it a versatile and reliable single bipolar junction transistor.
The specific data is subject to PDF, and the above content is for reference
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