2PA1774Q,115

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	PNP
Current - Collector (Ic) (Max):	150mA
Voltage - Collector Emitter Breakdown (Max):	50V
Vce Saturation (Max) @ Ib, Ic:	200mV @ 5mA, 50mA
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	120 @ 1mA, 6V
Power - Max:	150mW
Frequency - Transition:	100MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	SC-75, SOT-416
Supplier Device Package:	SC-75
Base Part Number:	2PA1774

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Introduction
The 2PA1774Q,115 is a transistor made for use in the telecommunications industry. It is a single bipolar transistor (BJT) that has been designed to handle high operating temperatures and high currents. It is an ideal choice for applications that require maximum reliability in extreme temperatures and heavy-duty operation.Design
The 2PA1774Q,115 has a planar structure with a P+ buried layer that provides enhanced current conduction and greater reliability when compared to conventional transistors. Its superior thermal performance and high-frequency switching capability make it a great solution for many industries.The device has a collector-emitter breakdown voltage of over 200V and an extremely low saturation voltage of 33V. Its base-collector capacitance (Cb) is also quite low at only 1.7pF. The maximum collector-emitter voltage is also very low at just 8V.The 2PA1774Q,115 also has a very fast turn-on and turn-off time, with a switching time of just 400ns. It is highly efficient thanks to its ultra-low power consumption, as well as excellent temperature stability across a wide range of temperatures.Application Fields
The 2PA1774Q,115 is an excellent choice for a variety of applications due to its superior performance and reliability. It is primarily used in the telecommunications industry for applications such as amplifier circuits, high-speed switching, and power amplifiers.It is also widely used in high-end audio applications for audio amplifiers and digital-to-analog converters. Its superior performance and reliability make it an ideal choice for applications such as power amplifiers, receivers, and digital-to-analog converters.Working Principle
The 2PA1774Q,115 operates using the principle of bipolar junction transistor (BJT) theory. In this type of transistor, current flows between two distinct junctions of opposite polarity within the same semiconductor material.BJT transistors work by having one layer of semiconductor material, either n-type or p-type material, sandwiched between two layers of the opposite type. As current flows through the device, the two electrons that were present in the n-layer are forced to the p-layer, leaving a gap in the n-layer. This gap allows holes to flow from the p-layer to the n-layer, thus creating a charge-neutral region, known as the depletion zone.This zone acts as the control element of the transistor and can be modulated with the application of an electric field. When this field is present, the current flowing across the depletion zone will be proportional to the amount of electric field applied. This modulation of current is what allows the transistor to be used for amplifying signals or for switching operations.Conclusion
The 2PA1774Q,115 is a reliable and efficient single transistor designed for use in extreme temperatures and heavy-duty operations. It has superior thermal performance, low saturation voltage, and low base-collector capacitance, making it ideal for use in audio, telecommunications, and power applications. It operates using the principle of BJT theory, which modulates the flow of current across the depletion zone of the transistor in order to amplify or switch signals.

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