2PA1774R,115 Discrete Semiconductor Products |
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Allicdata Part #: | 568-5988-2-ND |
Manufacturer Part#: |
2PA1774R,115 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | TRANS PNP 50V 0.15A SC-75 |
More Detail: | Bipolar (BJT) Transistor PNP 50V 150mA 100MHz 150m... |
DataSheet: | 2PA1774R,115 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 150mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Vce Saturation (Max) @ Ib, Ic: | 200mV @ 5mA, 50mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 180 @ 1mA, 6V |
Power - Max: | 150mW |
Frequency - Transition: | 100MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SC-75, SOT-416 |
Supplier Device Package: | SC-75 |
Base Part Number: | 2PA1774 |
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The 2PA1774R,115 is a type of bipolar junction transistor that belongs to the single transistor category. Bipolar junction transistors (BJT) are solid state devices which comprise of three layers of semiconductor material. The two outer layers are either made of n-type or p-type material, while the middle layer is made of opposite type material. As such, BJTs are current-controlled devices, which make them suitable for the switching and amplification of electronic signals.
The 2PA1774R,115 is a single transistor that utilizes PN junction technology to form a three-terminal device. It has a current amplification factor (beta) of about 135, which makes it ideal for applications that require high current amplification. Since it has a low operating temperature, the 2PA1774R,115 is also ideal for low power applications. It has a wide range of operating voltages and can operate over a temperature range of -40 to +125°C.
The 2PA1774R,115 is commonly used in various applications including RF (radio frequency) amplifiers, amplifiers for wideband and general-purpose applications, voltage regulators, and oscillators. It is also used in control circuitry and low-noise amplifiers.
In terms of its working principle, the 2PA1774R,115 uses a three-terminal device based on the PN junction. It features a collector, a base, and an emitter which can control the current in the collector. When a small base current is supplied, the collector-emitter junction turns on and allows current to flow from the collector to the emitter. This collector current is then amplified by the common-emitter current gain (beta) characteristic. By controlling the amount of current flowing through the collector-emitter junction, the 2PA1774R,115 can amplify or attenuate the incoming signal.
The 2PA1774R,115 can also be used in digital switching circuits. By controlling the amount of current flowing through the base-emitter junction, the transistor can be used to switch an electronic signal on or off. It also has a low input capacitance making it suitable for high-speed switching applications.
In conclusion, the 2PA1774R,115 is a type of bipolar junction transistor that belongs to the single transistor category. It has a low operating temperature and current amplification factor (beta) of about 135. It is commonly used in RF amplifiers, wideband amplifiers, voltage regulators, oscillators, control circuitry, and low-noise amplifiers. Working on a three-terminal device principle of PN junction, it can be used to amplify or attenuate signals, or switch an electronic signal on or off.
The specific data is subject to PDF, and the above content is for reference
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