2PD601ARL,235 Allicdata Electronics
Allicdata Part #:

2PD601ARL,235-ND

Manufacturer Part#:

2PD601ARL,235

Price: $ 0.01
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: TRANS NPN 50V 0.1A SOT-23
More Detail: Bipolar (BJT) Transistor NPN 50V 100mA 100MHz 250m...
DataSheet: 2PD601ARL,235 datasheet2PD601ARL,235 Datasheet/PDF
Quantity: 1000
10000 +: $ 0.01528
Stock 1000Can Ship Immediately
$ 0.01
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 2mA, 10V
Power - Max: 250mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236AB (SOT23)
Base Part Number: 2PD601A
Description

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The 2PD601ARL,235 is a Transistor - Bipolar (BJT) - Single, which has many applications and a unique working principle.

Transistors are electrical components that have three terminals, a collector, an emitter and a base. The operation of transistors is mainly determined by these three parameters. In the case of the 2PD601ARL,235 transistor, the current gain ranges from 40 to 200, the power dissipation rating is 500 mW and the collector-emitter saturation voltage is 1V. This means that the transistor can be used in various applications where high power and high gain are required.

One of the main characteristics of the 2PD601ARL,235 is its small footprint. This makes it an ideal choice for applications where space is an issue, such as consumer electronics, automotive, and aerospace. Another great feature of the 2PD601ARL,235 is its high speed switching ability. This makes it suitable for applications that require fast response, such as those used in communication and processing systems.

The working principle of the 2PD601ARL,235 is relatively simple and is based on the concept of semiconductors. In a transistor, the base terminal receives a current, which in turn causes an electric field to spread across the rest of the terminal. This electric field will cause the electron density in the collector and emitter terminals to increase. When this happens, current will start to flow from the collector to the emitter, and from the emitter to the collector from the base current.

This is known as the bipolar junction transistor (BJT) effect. This is an important part of the functioning of a transistor, as it determines how much current can flow through the terminals of the transistor. The 2PD601ARL,235 is designed to make use of this effect in order to provide high power and high speed switching. This allows the transistor to be used in applications where high power is required, and fast response times are essential.

The 2PD601ARL,235 Transistor - Bipolar (BJT) - Single is an excellent choice for applications where high power and high gain are required, as well as when size and speed are important considerations. Its small form factor and fast switching ability make it suitable for a wide range of applications. Thanks to its impressive features, the 2PD601ARL,235 transistor can be found in many consumer electronics, automotive, and aerospace products.

The specific data is subject to PDF, and the above content is for reference

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