2PD602AQ,115 Allicdata Electronics
Allicdata Part #:

2PD602AQ,115-ND

Manufacturer Part#:

2PD602AQ,115

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: NXP USA Inc
Short Description: TRANS NPN 50V 0.5A SC-59
More Detail: Bipolar (BJT) Transistor NPN 50V 500mA 140MHz 250m...
DataSheet: 2PD602AQ,115 datasheet2PD602AQ,115 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 30mA, 300mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 150mA, 10V
Power - Max: 250mW
Frequency - Transition: 140MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SMT3; MPAK
Base Part Number: 2PD602
Description

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The 2PD602AQ,115 is a high power bipolar junction transistor (BJT) designed for a high power, fast switching application. This transistor can cope with hundreds of Amperes and has a maximum power dissipation of 115W.

2PD602AQ,115 is specifically designed for heavy load switching applications. It is commonly used for high power applications in the automotive and industrial sectors. Also, it is finding application in high power switching applications such as lighting, motor control, and control systems.

The 2PD602AQ,115 is a single-bjt, which means it is composed of just one PNP transistor. It has a high breakdown voltage of 60V, a collector current of 600A, and a maximum operating temperature of 175°C. The device is available in a TO-3 package.

The 2PD602AQ, 115 transistor uses a PNP configuration, which means it conducts most current when the base voltage varies from its emitter voltage. This is done via the PNP structure that allows current to move in one direction when there is an electric difference in two terminals. It encloses an Emitter, Base and Collector Node and these nodes need to be connected to properly complete the circuit.

The 2PD602AQ,115 is capable of switching large currents, with a maximum current gain of 40. The maximum collector current gain of this transistor is 600A, which is enough for most switching needs. The high current gain of this fast-switching transistor also allows it to quickly switch between the low and high states with minimal power consumption, making it perfect for applications that require precision switching.

The 2PD602AQ,115 also has a high noise immunity and reliability. This is due to the high breakdown voltage of the device, which allows it to protect itself from any kind of external noise or electrical disturbances. In addition, the low thermal resistance of this single-bjt also ensures effective thermal management.

The 2PD602AQ,115 is perfect for applications that require high power switching, such as motor control, lighting, automotive systems and control systems. Its high current and voltage ratings make it suitable for use in heavy load switching applications. It is also ideal for applications requiring fast switching with low power consumption.

The specific data is subject to PDF, and the above content is for reference

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