| Allicdata Part #: | 2SA2013-TD-EOSTR-ND |
| Manufacturer Part#: |
2SA2013-TD-E |
| Price: | $ 0.08 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | TRANS PNP 50V 4A SOT89-3 |
| More Detail: | Bipolar (BJT) Transistor PNP 50V 4A 400MHz 3.5W Su... |
| DataSheet: | 2SA2013-TD-E Datasheet/PDF |
| Quantity: | 5000 |
| 1 +: | $ 0.08000 |
| 10 +: | $ 0.07760 |
| 100 +: | $ 0.07600 |
| 1000 +: | $ 0.07440 |
| 10000 +: | $ 0.07200 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Transistor Type: | PNP |
| Current - Collector (Ic) (Max): | 4A |
| Voltage - Collector Emitter Breakdown (Max): | 50V |
| Vce Saturation (Max) @ Ib, Ic: | 340mV @ 100mA, 2A |
| Current - Collector Cutoff (Max): | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 200 @ 500mA, 2V |
| Power - Max: | 3.5W |
| Frequency - Transition: | 400MHz |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | TO-243AA |
| Supplier Device Package: | PCP |
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2SA2013-TD-E is a type of single transistor that belongs to the family of bipolar transistors. It is also referred to as a bipolar junction transistor (BJT). 2SA2013-TD-E is used in a wide range of applications that require electronic signal amplification, signal switching, and signal hogging.
The working principle of 2SA2013-TD-E is the same as that of any other type of transistor. It uses a base, emitter, and collector connection to operate. It has an NPN (Negative-Positive-Negative) architecture, where the emitter is connected to the base through a P-type rather than an N-type material. Electrons flow into the emitter and out of the collector, while the base controls the current flow of the device.
2SA2013-TD-E transistors are used primarily in digital and linear processing applications. In digital processing, they are used to amplify digital signals, control the speed of oscillators, create constant amplitudes, and act as logic elements in logic circuits. Linear processing applications include amplifying audio signals and controlling their frequency response.
2SA2013-TD-E transistors are also used in high power applications, such as RF (Radio frequency) amplifiers and high voltage DC power supplies. These applications require the transistor to operate at high voltage and high currents. For these applications, the transistor can be used as a switch and can be used to control the flow of electrons from one device to another.
2SA2013-TD-E transistors can also be used in power efficient applications such as power supplies, solar cells, and LED systems. They are used to control the current flow in the device, providing a very efficient solution for power conversion. In addition, the transistor can be used to create a smooth ramp for the output voltage or current.
Due to its high power ratings, high efficiency, and small size, 2SA2013-TD-E transistors are widely used in a variety of electronic applications. They can be easily integrated into circuits and devices, making them ideal for design projects. In addition, they are relatively simple to use and understand, so they are often chosen as an affordable and reliable solution to complex problems.
Overall, 2SA2013-TD-E is a widely used single transistor that provides a reliable and efficient solution for a variety of electronic applications. It is used in several different applications, such as digital and linear processing, high power applications, and power efficient applications. It is often used as a switch or amplifier and is the perfect solution for many design projects.
The specific data is subject to PDF, and the above content is for reference
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2SA2013-TD-E Datasheet/PDF