Allicdata Part #: | 2SA216300ATR-ND |
Manufacturer Part#: |
2SA216300A |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS PNP 20V 0.03A ML3-N2 |
More Detail: | Bipolar (BJT) Transistor PNP 20V 30mA 300MHz 100mW... |
DataSheet: | 2SA216300A Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 30mA |
Voltage - Collector Emitter Breakdown (Max): | 20V |
Vce Saturation (Max) @ Ib, Ic: | 100mV @ 1mA, 10mA |
Current - Collector Cutoff (Max): | 100µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 70 @ 1mA, 10V |
Power - Max: | 100mW |
Frequency - Transition: | 300MHz |
Operating Temperature: | 125°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SC-101, SOT-883 |
Supplier Device Package: | ML3-N2 |
Base Part Number: | 2SA2163 |
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The 2SA216300A transistor is a single bipolar junction transistor (BJT), type NPN power transistor, manufactured by Toshiba. It has a maximum collector current of 10A and can operate up to a maximum total power dissipation (PD) of 220 W. Physical characteristics of this transistor include a collector-base voltage of 600 V, a collector-emitter voltage of 400 V, and an emitter-base voltage of 6 V. The switches on-state resistance is typically 0.21 Ω and the amplifying factor is typically 200. All this information is useful when engineering a specific application.
The application field of the 2SA216300A is in power switching applications. In power switching applications, its current carrying capacity and high voltage range make it an ideal choice for the switching of high voltage power electronics components. For example, this transistor is widely used for the AC chopper control of multiple high voltage AC motors. This transistor can also be used for the high voltage switching of resistive and inductive loads, including relays and lamps. It has relatively low on-state resistance and is capable of providing controlled current and voltage for high current switching applications.
The 2SA216300A works on the principle of transistor action. A transistor is a three-terminal device, with a base terminal, an emitter terminal and a collector terminal. A single bipolar junction transistor (BJT) is composed of two p-n junctions in a sandwich-like structure. A single NPN transistor, like the 2SA216300A, consists of a N-type material between two P-type regions. Charge carriers, such as electrons, travel from the emitter to the collector through the N-type material, creating a flow of current. The switch is then operated id when a small base current is applied, allowing the transistor to switch on. Conversely, when the base current is removed, the transistor switches off.
To summarise, the 2SA216300A is a single bipolar junction transistor (BJT), type NPN power transistor manufactured by Toshiba. This transistor is mainly used for the power switching of high voltage power electronics components. It has a high voltage range and relatively low on-state resistance to provide controlled current and voltage for a high current switching application. The transistor works on the principle of transistor action, with charge carriers travelling from the emitter to the collector when the base current is applied, allowing the transistor to switch on.
The specific data is subject to PDF, and the above content is for reference
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