Allicdata Part #: | 2SA2127-AEX-ND |
Manufacturer Part#: |
2SA2127-AEX |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS BIPO TO-93 |
More Detail: | Bipolar (BJT) Transistor |
DataSheet: | 2SA2127-AEX Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | * |
Part Status: | Obsolete |
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The 2SA2127-AEX is a single bipolar junction transistor (BJT) device produced by ROHM. This BJT is compatible with the 2SC2127-AEX device and is used in a variety of applications, typically found within the automotive, industrial, and telecommunications industries. This device features a collector-emitter voltage of 250V, a collector current of 0.2A, and a power dissipation of 500mA.
The primary application fields of the 2SA2127-AEX include power amplifiers, voltage regulators and motor control systems. The device is also suitable for general purpose BJT operations, from small signal amplification to load and power switching, as well as current driver applications. This device\'s high collector-emitter voltage rating, high gain power transistors, and wide range of operating temperatures make it particularly well-suited for use in industrial and automotive environments.
The working principle of the 2SA2127-AEX is based on the principle of semiconductor conduction. A semiconductor is a material, usually silicon, that possesses electrical properties somewhere between those of a conductor and an insulator. When an external voltage is applied across a semiconductor junction, the electrons and holes within the material recombine and the material\'s resistance decreases. This decrease in resistance allows the flow of current through the transistor\'s base, emitter and collector.
The primary function of the BJT is to amplify and switch current, generating voltages of greater magnitude than those applied, depending on the current that enters the transistor. When the base current enters, it turns the BJT into an amplifier and the current passing through the BJT is controlled by the base current. The current that is added to the base is amplified by the amount of resistance in the collector and emitter of the transistor.
The 2SA2127-AEX is a reliable, high-performance single BJT device that can be used in a wide range of applications. The device\'s characteristics such as its high collector-emitter voltage rating, its high gain power transistors and wide operating temperature range make it a suitable choice for use in industrial and automotive environments. Thanks to its versatility, the device can be used for a variety of purposes, from power amplification and voltage regulation to motor control systems.
The specific data is subject to PDF, and the above content is for reference
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