| Allicdata Part #: | 2SA2151-ND |
| Manufacturer Part#: |
2SA2151 |
| Price: | $ 3.24 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Sanken |
| Short Description: | TRANS PNP 200V 15A TO3P |
| More Detail: | Bipolar (BJT) Transistor PNP 200V 15A 20MHz 160W T... |
| DataSheet: | 2SA2151 Datasheet/PDF |
| Quantity: | 174 |
| 1 +: | $ 2.94210 |
| 10 +: | $ 2.62962 |
| 25 +: | $ 2.36653 |
| 100 +: | $ 2.15618 |
| 250 +: | $ 1.94579 |
| 500 +: | $ 1.74597 |
| 1000 +: | $ 1.47250 |
Specifications
| Series: | -- |
| Packaging: | Bulk |
| Part Status: | Active |
| Transistor Type: | PNP |
| Current - Collector (Ic) (Max): | 15A |
| Voltage - Collector Emitter Breakdown (Max): | 200V |
| Vce Saturation (Max) @ Ib, Ic: | 500mV @ 500mA, 5A |
| Current - Collector Cutoff (Max): | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 50 @ 3A, 4V |
| Power - Max: | 160W |
| Frequency - Transition: | 20MHz |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Through Hole |
| Package / Case: | TO-3P-3, SC-65-3 |
| Supplier Device Package: | TO-3P |
Description
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2SA2151 is a single, low-power bipolar transistor from Toshiba Semiconductor and Storage, dynamic classification filed and characteristics which offers an operating temperature range of -55 °C to +150 °C. It usually used in telecommunications and consumer electronics, such as analog and digital audio and video, amplifiers, radio receivers, and other low-voltage, low-current applications. This article analysis the application field of 2SA2151 and the working principle of the transistor for better understanding and reference.
Application Field
2SA2151 is a low-power NPN bipolar transistor, primarily used in small signal audio and switching applications. With a collector current of up to 110 mA and a BVceo of 30 V, the device offers long and reliable service, capable of delivering low distortion at high volumes. It is designed primarily for use in receiver, power oscillator, and audio amplifier applications.
Working Principle
An NPN bipolar transistor, such as 2SA2151, requires an external voltage to create a conductive path between the collector and the emitter. This voltage is referred to as the base-emitter voltage, or BVceo. When a voltage is applied to the base-emitter, electrons are released from the emitter and are attracted to the base, creating a large current flow between the collector and the emitter. This "on" state is referred to as a saturation state.
In addition to BVceo, a transistor can also be operated in the "cutoff" state. In this state, the voltage applied to the base-emitter is low enough that no current flows between the collector and the emitter. This state is useful for amplifying very small signals or switching multiple devices on and off quickly.
To summarize, 2SA2151 is a low-power NPN bipolar transistor which works similarly to other transistors. It acts as an amplifier or a switch and is usually used in receiver, power oscillator, and audio amplifier applications. The voltage applied to the base-emitter influences the current flow between the collector and the emitter, thereby controlling the saturation or cutoff state.
The specific data is subject to PDF, and the above content is for reference
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2SA2151 Datasheet/PDF