2SJ162-E Allicdata Electronics
Allicdata Part #:

2SJ162-E-ND

Manufacturer Part#:

2SJ162-E

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Renesas Electronics America
Short Description: MOSFET P-CH 160V 7A TO-3P
More Detail: P-Channel 160V 7A (Ta) 100W (Tc) Through Hole TO-3...
DataSheet: 2SJ162-E datasheet2SJ162-E Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: --
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3P
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 100W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 10V
Vgs (Max): ±15V
Series: --
Rds On (Max) @ Id, Vgs: --
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Drain to Source Voltage (Vdss): 160V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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2SJ162-E is an N-channel MOSFET, which is an abbreviation for "Metal-Oxide-Semiconductor Field Effect Transistor". As the name suggests, it is an electrical switch, controlled by voltage or current, which can be used to virtually control any electrical device. The working principle of this MOSFET is relatively straightforward and can be demonstrated with the help of a metaphor. Imagine a room with a set of slidinmg doors. The sliding doors can be open, closed, or partially open. A current or voltage can be used to control the sliding doors of the room, just like a MOSFET can be used to control the flow of current or voltage in a circuit.

2SJ162-E has many practical applications because of its various features, such as high performance, radiation hardness, and high-temperature operation. It is commonly used in high-efficieny power amplifiers for communications, industrial and automotive applications. It is also useful for controlling the power and speed of motors, solenoids, and heaters, as well as for switching applications in telephones and other similar devices. Additionally, it can be used in high-power applications, including power supply units, lighting circuits, and home automation.

2SJ162-E is especially useful for applications that require maximum efficiency and power dissipation due to its high efficiency ratings and low cause power loss. Its low-output capacitance and breakdown voltage makes it suitable for high-frequency switching applications, where switching losses are a major concern. Furthermore, its wide safe operating area ensures reliable operation and protection against overvoltage and overcurrent.

One of the main advantages of MOSFETs is their low-temperature operation. This unique feature makes them ideal for applications that need to be used in extreme temperatures. Moreover, they are suitable for applications that require high power density, such as power supplies and switching regulators. Additionally, they are capable of operating in environments with high EMI due to their low-input capacitance and good noise immunity.

In summary, 2SJ162-E is a high-performance, radiation-hardened, and high-temperature N-channel MOSFET that has a wide variety of applications. Its main advantages include its low resistance, wide safe operating area, low-output capacitance, and low-temperature operation. Moreover, its high-power density and low-input capacitance makes it suitable for high-frequency switching applications. Therefore, this device can be used for a wide range of applications, including motor speed control, power amplification, switching, and home automation.

The specific data is subject to PDF, and the above content is for reference

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