
Allicdata Part #: | 2SJ168TE85LFTR-ND |
Manufacturer Part#: |
2SJ168TE85LF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET P-CH 60V 0.2A S-MINI |
More Detail: | P-Channel 60V 200mA (Ta) 200mW (Ta) Surface Mount ... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | -- |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SC-59 |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 200mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 85pF @ 10V |
Vgs (Max): | ±20V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 2 Ohm @ 50mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 200mA (Ta) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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2SJ168TE85LF Application Field and Working Principle
The 2SJ168TE85LF is a type of Junction Field Effect Transistor (JFET), which belongs to a class of field-effect transistors (FETs) that is primarily used for switching and amplification applications. This device is capable of high-voltage operation and has a low-on-resistance, making it suitable for use in many different types of devices. In this article, we will discuss the application fields of the 2SJ168TE85LF and its working principle.
Application Field
This type of JFET is ideally suited for a wide range of devices, such as:
- High-voltage switching, including high-voltage digital circuits;
- Amplifier circuits, including those used in audio equipment;
- Analog-to-digital converters (ADCs) and digital-to-analog converters (DACs);
- Medical imaging, such as Magnetic Resonance Imaging (MRI).
The 2SJ168TE85LF is also used in many other applications, such as automotive ignition systems, power supplies, motor control circuits, and more.
Working Principle of the 2SJ168TE85LF
With JFETs, a bias voltage is applied to the gate terminal to create an ‘inversion layer’, which creates a depletion zone through which carriers can’t flow. When a voltage applied to the source and drain terminals, current will flow through the channel. The JFET has relatively low output impedance and high input impedance, due to the depletion zone. This makes the 2SJ168TE85LF an excellent choice for use in amplifier circuits and high-voltage switching applications.
Conclusion
The 2SJ168TE85LF is a popular type of Junction Field Effect Transistor (JFET) that offers excellent performance for many different applications. In this article, we have discussed the application fields of the 2SJ168TE85LF and its working principle. The device is ideal for a wide range of applications, such as high-voltage switching, amplifier circuits, medical imaging, automotive ignition systems, power supplies, motor control circuits, and more.
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