5X49_BG7002B

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The 5X49_BG7002B N-Channel enhancement mode MOSFET is a single type device which is well suited for various applications including audio, high frequency and power switching. This type of transistor is commonly used in many electronic circuits and is used in a wide variety of ways from amplifying signals to switching power supplies.

The 5X49_BG7002B is a two-terminal device which operates using a field effect transistor (FET) architecture. It consists of an insulated-gate, which forms a channel-type structure in an n-type semiconductor material. Charge carriers within the channel are attracted by an electric field established between the gate and the adjoining source and drain terminals to form a voltage-controlled switch. The gate-to-source voltage (“VGS”) determines whether the MOSFET is “on” or “off”. Therefore, VGS can be used to control the conduction of the transistor through a range of voltages referred to as the transconductance or “gm” range.

The 5X49_BG7002B has a maximum drain-source voltage (“VDS”) of 60 volts, a maximum drain-source current (“ID”) of 2.0 amperes, a maximum gate-source voltage (“VGS”) of 4.0 volts, and a minimum VGS of -4.0 volts. It also has a minimum gate-source leakage current (“IGSL”) of 1.0 uA and a maximum drain-source on-state resistance (“RDS(on)”) of 0.14 ohms. It is also RoHS compliant and ESD tolerant, making it ideal for many applications.

The 5X49_BG7002B is commonly used in audio and power switching applications, due to its high current density and power handling capabilities. Its drain-source breakdown voltage (“VBD”) of 60 volts enables it to function well in high voltage applications, while its maximum drain-source current of 2.0 amps allows it to carry current in high current switch applications. In addition, the 5X49_BG7002B has an on-state resistance of 0.14 ohms, meaning it is well suited to handle power and reduce power losses in high power applications.

The 5X49_BG7002B is also popular for use in high frequency and signal amplification applications. It has a high frequency range (“FS”) of 13.6 Ghz, which enables it to perform well in RF applications. It also has a low input capacitance (“Ciss”) of 125 pF, making it well suited for use in amplifier circuits. In addition, the 5X49_BG7002B has a fast switching speed of 11 ns, allowing it to amplify signals quickly and accurately in high speed amplifier applications.

The 5X49_BG7002B is a versatile, single FET device which is suited for a wide range of applications. Its wide range of features, excellent handling capabilities, and fast switching times make it a great choice for use in audio, power switching, high frequency, and signal amplification applications. It is RoHS compliant and ESD tolerant, making it a sound investment for small and large scale applications.

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