70V3379S4PRF Allicdata Electronics
Allicdata Part #:

70V3379S4PRF-ND

Manufacturer Part#:

70V3379S4PRF

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 576K PARALLEL 128TQFP
More Detail: SRAM - Dual Port, Synchronous Memory IC 576Kb (32K...
DataSheet: 70V3379S4PRF datasheet70V3379S4PRF Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tray 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Synchronous
Memory Size: 576Kb (32K x 18)
Write Cycle Time - Word, Page: --
Access Time: 4.2ns
Memory Interface: Parallel
Voltage - Supply: 3.15 V ~ 3.45 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 128-LQFP
Supplier Device Package: 128-TQFP (14x20)
Base Part Number: IDT70V3379
Description

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Memory serves an important role in daily life and in production facilities. It plays a vital role in controlling and managing data for computers, communications networks, and other systems. The 70V3379S4PRF is a type of memory device designed for use in many different applications, from industrial, medical, and aerospace applications to home appliances. It can be used as a single-component device or as part of a much larger memory system.

The 70V3379S4PRF is a 4G full speed DDR3 SDRAM device. It is a 4 Gigabit (GBytes) device that supports data throughput of up to 800Mbit/s and has a peak transfer rate of 1.6Gbit/s. The device features an array of 8 Bank Groups, each consisting of 8 Bank Blocks. It provides high-speed access, reliable operation, and enables effective integration in a variety of applications.

The 70V3379S4PRF uses Non-volatile SRAM (NVSRAM) technology, which enables data to be stored in memory even when power is not supplied. This technology eliminates the need for external batteries, which can be costly, especially in high-volume applications, and can result in unreliable data storage. Additionally, NVSRAM technology reduces the power consumption of the device, allowing for increased battery life and lower components costs.

The 70V3379S4PRF also has a low refresh rate, which helps increase the power efficiency of the device. By reducing the refresh rate, power consumption is significantly reduced and more energy can be used for other purposes. In addition, the refresh rate prevents data from becoming stale and keeps the device running at optimal performance.

The device features an 8-bit databus width and supports the latest 512-bit and x16 DDR3 memory technologies. Its memory management system is configurable to supports four independent channels. This allows the device to access multiple sections of the RAM simultaneously. In addition, the device offers an array of unique features that make it suitable for a variety of applications.

The 70V3379S4PRF also features Error Correction Code (ECC) capability, which helps guard against corruption of data. ECC is used to detect and protect against errors caused by faults in the storage cells of the memory device. This ensures that the stored data is valid and accurate, which is critical for data integrity in a wide range of applications.

The 70V3379S4PRF memory device is designed for use in many types of applications, such as industrial, medical, aerospace, and home appliances. Its high speed, low power consumption, and excellent ECC capabilities make it an ideal choice for applications that require reliable and consistent data storage. In addition, its array of 8 Bank Groups and 512-bit and x16 DDR3 memory technologies make it an excellent choice for memory requirements in a variety of settings.

The specific data is subject to PDF, and the above content is for reference

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