70V3569S6DR Allicdata Electronics
Allicdata Part #:

70V3569S6DR-ND

Manufacturer Part#:

70V3569S6DR

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 576K PARALLEL 208PQFP
More Detail: SRAM - Dual Port, Synchronous Memory IC 576Kb (16K...
DataSheet: 70V3569S6DR datasheet70V3569S6DR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tray 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Synchronous
Memory Size: 576Kb (16K x 36)
Write Cycle Time - Word, Page: --
Access Time: 6ns
Memory Interface: Parallel
Voltage - Supply: 3.15 V ~ 3.45 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 208-BFQFP
Supplier Device Package: 208-PQFP (28x28)
Base Part Number: IDT70V3569
Description

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Memory is an important component of a computer system. It is responsible for storing data and instructions when the computer is turned off, as well as powering program execution when the computer is powered on. The 70V3569S6DR is a type of memory that is designed to provide high-performance storage and is used in a variety of applications.

The 70V3569S6DR is a dynamic random access memory (DRAM) that is based on the storage of electrical charges to store data. It typically provides a much faster access time than static RAM (SRAM) and is used in a wide variety of consumer electronic devices due to its increased speed and lower cost. The 70V3569S6DR is a type of memory that is usually used for applications that require large amounts of data to be stored temporarily to enable rapid access and manipulation. It is often used in gaming consoles, graphics processing units (GPUs), computer memory, and as a source of low latency, high-speed memory in servers.

The 70V3569S6DR is a synchronous DRAM that allows both reads and writes to be performed simultaneously on a single clock cycle. It has a total of 2,048,896 megabytes (MB) of storage capacity and is based on a largely scalable technology, which makes it possible to expand the total storage capacity when needed. The 70V3569S6DR also has an internal error correction code (ECC) that is responsible for detecting and correcting any errors within the stored data. This helps to ensure that the data is kept in both accurate and reliable states at all times.

The 70V3569S6DR memory also utilizes several features to improve the speed of accessing stored data. One of these features is multi-bank switching, which allows a number of separate banks to be accessed simultaneously. This increases the total data-transfer rate and helps make the 70V3569S6DR an ideal choice for applications that require large amounts of data to be transferred quickly. The 70V3569S6DR is also capable of operating in both burst and page mode, which provides additional performance gains that make the memory an extremely attractive choice for applications such as gaming consoles and GPUs that require low latency, high-speed memory.

In addition to its memory operations, the 70V3569S6DR also includes its own power management system. This system helps to reduce the total power consumption of the memory and can be configured to reduce the power consumption when the memory is not in use. This helps to maximize the overall efficiency of the memory and makes the 70V3569S6DR an ideal choice for applications where power efficiency is a key factor.

The 70V3569S6DR memory is an excellent choice for many applications and provides an ideal solution for those needing large amounts of fast, reliable memory. Its large storage capacity and fast access times make it ideal for applications such as gaming consoles and GPUs, while its power management system helps to maximize the efficiency of the memory. Its capabilities make the 70V3569S6DR a great choice for any application that requires fast memory and power efficiency.

The specific data is subject to PDF, and the above content is for reference

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