70V3569S4BF8 Allicdata Electronics
Allicdata Part #:

70V3569S4BF8-ND

Manufacturer Part#:

70V3569S4BF8

Price: $ 30.56
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 576K PARALLEL 208CABGA
More Detail: SRAM - Dual Port, Synchronous Memory IC 576Kb (16K...
DataSheet: 70V3569S4BF8 datasheet70V3569S4BF8 Datasheet/PDF
Quantity: 1000
1000 +: $ 27.78300
Stock 1000Can Ship Immediately
$ 30.56
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Synchronous
Memory Size: 576Kb (16K x 36)
Write Cycle Time - Word, Page: --
Access Time: 4.2ns
Memory Interface: Parallel
Voltage - Supply: 3.15 V ~ 3.45 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 208-LFBGA
Supplier Device Package: 208-CABGA (15x15)
Base Part Number: IDT70V3569
Description

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S4BF8 is a type of memory. It is based on a non-volatile solution that supports 42-bit shifts and has a wide operating temperature range that is slightly bigger than those found on SRAM chips. It is equipped with a high-density architecture, allowing it to process large amounts of data with a few operations. Its wide operating range is ideal for mission critical applications with extreme environmental conditions.

The 70V3569S4BF8 memory chip is used in a variety of settings, from household electronics to industrial and commercial applications. In vehicles, for example, the chip can be used for diagnosis and tracking. In servers, the memory stores information about transactions and data that is used to manage the workload. Other applications include gaming consoles, medical equipment, aerospace and military applications, and telecommunications.

The 70V3569S4BF8 memory chip uses a ferroelectric liquid crystal (FLC) structure to store and access data. This technology is a combination of liquid crystal (LC) and ferroelectric storage, giving it well-known properties of ferroelectricity—meaning it can be used as a volatile or non-volatile memory device. This type of memory is an emerging technology that is becoming increasingly popular.

The chip utilizes a sense amplifier circuit, which allows it to detect a charge-induced voltage change and generate a signal that can be read in the form of 0s and 1s. This circuit is made up of two sets of transistors, one controlling the read line and the other controlling the write line. These two lines determine the data bits being written and read from the memory. Additionally, the sense amplifier circuit is connected to the ICs mode signal and a power supply line.

The FLC memory chip also includes a selection unit and programmable logic. This combination provides the user with flexibility and control, allowing them to select memory bits and other programmable elements that can be changed based on the requirements of their application. A typical feature of this chip is that it supports many low-level programming commands that are used for data manipulation within the chip. This feature makes it ideal for a wide range of applications.

The 70V3569S4BF8 uses a combination of FLC and transistors to store and access data. Its flexibility and low power consumption makes it an excellent choice for applications that require data storage and fast processing. Its wide operating range makes it suitable for mission-critical applications as well. Its combination of features makes it one of the more desirable memory chips currently available.

The specific data is subject to PDF, and the above content is for reference

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