70V35S20PF Allicdata Electronics
Allicdata Part #:

70V35S20PF-ND

Manufacturer Part#:

70V35S20PF

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 144K PARALLEL 100TQFP
More Detail: SRAM - Dual Port, Asynchronous Memory IC 144Kb (8K...
DataSheet: 70V35S20PF datasheet70V35S20PF Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tray 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 144Kb (8K x 18)
Write Cycle Time - Word, Page: 20ns
Access Time: 20ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x14)
Base Part Number: IDT70V35
Description

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Memory technology is continuously evolving, becoming faster and more energy efficient with each passing day. Among the components that drive this progress is the 70V35S20PF memory. In this article, we will look at the 70V35S20PF application field and its working principle.

The 70V35S20PF provides customers with high capacity, low power, and high stability and reliability memory chips. With its versatile design and high-speed performance, the 70V35S20PF can be applied in many scenarios, such as embedded systems, industrial automation, net-com, and HD video. It has a high-speed serial-ATA interface and an ultra-low power transfer rate with a sustained read speed of 6.0GB/s and can be used with DDR3 and DDR4 memory modules.

The 70V35S20PF memory chip has many features that make it an ideal choice for memory applications. It has 70 nm process technology with a nominal voltage of 1.35V and low power consumption with a maximum read of 2.8W. It also offers 20 GB of addressable memory and supports a 2, 3 or 4-channel mode, depending on the application. There is also error correction code (ECC) built in to enhance the speed and reliability of its operation.

The working principle of the 70V35S20PF follows the classic memory architecture. It is essentially a large array of memory cells connected in a grid. The memory is organized into rows and columns of cells that hold a binary 0 or 1 corresponding to either a zero or one. To read or write data to the memory, the address of the location being accessed is determined via the use of row and column addresses. When the location is identified, the data is written to or from the memory cell.

The 70V35S20PF memory chip provides excellent performance, low power consumption, and high reliability for memory applications. It is well-suited for a variety of embedded system, industrial automation, net-com, and HD video applications. Its versatile design, high-speed performance, and low-power transfer rate make it an ideal choice for memory applications looking to get the most out of their systems.

The specific data is subject to PDF, and the above content is for reference

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