71V321LA55PF Allicdata Electronics
Allicdata Part #:

71V321LA55PF-ND

Manufacturer Part#:

71V321LA55PF

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 16K PARALLEL 64TQFP
More Detail: SRAM - Dual Port, Asynchronous Memory IC 16Kb (2K ...
DataSheet: 71V321LA55PF datasheet71V321LA55PF Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tray 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 16Kb (2K x 8)
Write Cycle Time - Word, Page: 55ns
Access Time: 55ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Supplier Device Package: 64-TQFP (14x14)
Description

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The 71V321LA55PF memory is designed to enable fast, low-cost, low-power systems that require higher DRAM density or performance than traditional DRAM. It is a dynamic random access memory (DRAM)Cache memory device with integrated cachemanagement to reduce the latency associated with DRAM accesses. It is primarily intended to help manage processor caching and main memory accesses. The 71V321LA55PF memory can significantly improve system performance and reduce power consumption.

The 71V321LA55PF memory has a simple 2-port architecture that can divide the tasks of fetching data from the cache and writing data to the cache. The fetch port is used by the processor to bring in the data from the cache and returns it if a cache hit occurs. The write port is used to flush dirty data from the cache to main memory. This also includes pre-fetching and post-writing operations.

One of the key features of the 71V321LA55PF memory is its on-chip memory management. This includes both the cache line fill and a prefetch mechanism that allows the processor to pre-fill the cache with data from main memory. The prefetch mechanism works by monitoring the processor\'s read and write requests and then fetching the data according to the understanding of the processor\'s data access patterns.

The 71V321LA55PF memory also has an optimization technique known as the data line combine. This allows the cache to combine several data lines into a larger single data line, reducing the number of lines the processor must fetch each time it requests data. This optimization significantly reduces the number of latencies needed to fetch data, making the cache accesses more efficient.

The 71V321LA55PF memory has several key application fields, including embedded systems, low-power mobile devices, and automotive applications that require low power as well as high DRAM density and/or performance. The device is also used in high-performance systems that require faster DRAM accesses and higher DRAM density.

The 71V321LA55PF memory has several advantages, such as low power consumption, high DRAM density and performance, and optimized cache line management. These advantages make it a viable choice for embedded and automotive applications where power, density and performance are key requirements.

In conclusion, the 71V321LA55PF memory is a highly versatile and low-power memory device that can provide significant performance, density and power advantages for embedded, automotive and high-performance systems. It has an integrated cache management system and several optimizations that can increase the efficiency of data accesses. This device offers significant advantages for many applications, which makes it a popular choice for a variety of designs.

The specific data is subject to PDF, and the above content is for reference

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