71V3556SA100BGI Allicdata Electronics
Allicdata Part #:

71V3556SA100BGI-ND

Manufacturer Part#:

71V3556SA100BGI

Price: $ 4.80
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 4.5M PARALLEL 119PBGA
More Detail: SRAM - Synchronous ZBT Memory IC 4.5Mb (128K x 36)...
DataSheet: 71V3556SA100BGI datasheet71V3556SA100BGI Datasheet/PDF
Quantity: 1000
168 +: $ 4.36519
Stock 1000Can Ship Immediately
$ 4.8
Specifications
Write Cycle Time - Word, Page: --
Base Part Number: IDT71V3556
Supplier Device Package: 119-PBGA (14x22)
Package / Case: 119-BGA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135 V ~ 3.465 V
Memory Interface: Parallel
Access Time: 5ns
Series: --
Clock Frequency: 100MHz
Memory Size: 4.5Mb (128K x 36)
Technology: SRAM - Synchronous ZBT
Memory Format: SRAM
Memory Type: Volatile
Part Status: Active
Packaging: Tray 
Description

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The 71V3556SA100BGI is a type of {Memory}, which is an essential component in most computer systems. As a key device of memory, it plays an important role in many common applications. It provides fast, reliable data storage for a multitude of applications, from graphics to databases and operating systems. Here we will discuss the application field and working principle of the 71V3556SA100BGI.

Regarding the application field of the 71V3556SA100BGI, this memory can be used in extreme low-power systems, such as wearable electronics devices and embedded systems. It is also used in various mobile applications and connected home devices. This memory is typically used for critical data storage, such as for storing critical configuration information, medical records, passwords, digital images, etc. It is also used for caching and accelerating data access, because it can store the frequently accessed data in the memory, thus providing faster data access than accessing data stored in the disk.

The working principle of the 71V3556SA100BGI is based on the physics principles of capacitors and transistors, which are two key components of semiconductor-based memory. The basic structure of the memory is a matrix of cells and each cell contains a small capacitance and a transistor. The capacitance is used to store data and the transistor is used to identify the data stored in the capacitance. When the transistor is “on”, the capacitance is “charged”, indicating that the data stored in the cell is “1”. Otherwise, the capacitance is “discharged” and the data is “0”. Therefore, with this working principle, the 71V3556SA100BGI memory can be used for writing and reading data. Moreover, the reading speed and accuracy are also improved.

The 71V3556SA100BGI is a type of {Memory} that offers fast and reliable data storage capabilities for a variety of applications. It also provides efficient data access and storage, making it suitable for embedded systems and other low-power applications. Furthermore, its working principle is based on capacitors and transistors, which allows it to provide efficient and accurate data storage and access. Therefore, the 71V3556SA100BGI can be used for many different applications in both mobile and connected home applications.

The specific data is subject to PDF, and the above content is for reference

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