71V321LA45PF Allicdata Electronics
Allicdata Part #:

71V321LA45PF-ND

Manufacturer Part#:

71V321LA45PF

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 16K PARALLEL 64TQFP
More Detail: SRAM - Dual Port, Asynchronous Memory IC 16Kb (2K ...
DataSheet: 71V321LA45PF datasheet71V321LA45PF Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tray 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 16Kb (2K x 8)
Write Cycle Time - Word, Page: 45ns
Access Time: 45ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Supplier Device Package: 64-TQFP (14x14)
Description

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Memory is an integral part of any modern computing system and has been around since the dawn of computing. 71V321LA45PF is a type of memory device used in computer memory systems to store and access data. It has a specific application field and unique working principles that make it an ideal choice for use in various applications.

Application Field

71V321LA45PF memory devices are commonly used in the field of data storage and retrieval. These devices are designed to meet the needs of both static and dynamic data storage and retrieval. They are highly reliable and offer superior performance, making them ideal for use in embedded systems, supercomputers, data centers, workstations, and mobile phones. The device has the capability to store large amounts of data in a single physical unit, making it suitable for large databases.

Working Principle

The 71V321LA45PF device consists of an array of memory cells, which are arranged in a two-dimensional structure for storing data. Each cell contains a single bit of data, which can be read or written from depending on the instructions received from the system. The device operates on the principle of dynamic random access memory (DRAM). Each memory cell contains capacitors and transistors, which are responsible for the storing and reading of data.

The memory cell is capable of writing data to it by charging the capacitors with electrons. Once the capacitors are charged, the data is stored. The capacitor is read by discharging it; this information is then further processed to retrieve the stored data.

The 71V321LA45PF memory device can handle data transfer rates of up to 50 megabits per second. It also has a fast response time, which allows quick access to the stored data. The device has low power consumption, making it extremely cost effective.

Conclusion

The 71V321LA45PF device is a versatile and reliable memory device that is ideal for a wide range of applications, from embedded systems and mobile phones to supercomputers and high-performance data centers. It has a low power consumption and a fast response time, making it an ideal choice for these high-quality applications. The device operates on a dynamic random access memory (DRAM) principle, utilizing transistors and capacitors to store and read data, respectively. Overall, this memory device is well-suited for large databases and computing systems.

The specific data is subject to PDF, and the above content is for reference

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