71V3556SA150BGG8

Write Cycle Time - Word, Page:	--
Base Part Number:	IDT71V3556
Supplier Device Package:	119-PBGA (14x22)
Package / Case:	119-BGA
Mounting Type:	Surface Mount
Operating Temperature:	0°C ~ 70°C (TA)
Voltage - Supply:	3.135 V ~ 3.465 V
Memory Interface:	Parallel
Access Time:	3.8ns
Series:	--
Clock Frequency:	150MHz
Memory Size:	4.5Mb (128K x 36)
Technology:	SRAM - Synchronous ZBT
Memory Format:	SRAM
Memory Type:	Volatile
Part Status:	Active
Packaging:	Tape & Reel (TR)

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Introduction to 71V3556SA150BGG8The 71V3556SA150BGG8 is a type of memory device that is used to store data in electronic devices. It is a type of non-volatile memory, meaning that the data stored in it will remain intact even if there is a power outage or other form of power disruption. The 71V3556SA150BGG8 is a type of Flash Memory, which is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory). This memory type is generally faster and more reliable than traditional ROMs (Read-Only Memory) and is used in a variety of applications.Application field of 71V3556SA150BGG8The 71V3556SA150BGG8 is commonly used in embedded systems, where its non-volatile memory capabilities are invaluable. The data stored in it can be used to store programs and data, even when there is a power interruption. This makes it ideal for applications such as digital cameras, mobile phones, PDAs (personal digital assistants), MP3 Players, industrial control systems, and other devices that need to store data without being connected to a power source.The 71V3556SA150BGG8 is also used in medical systems, where its non-volatile memory capabilities can store critical medical data even if the system loses power. It is used in systems such as healthcare databases, patient files, medical scheduling systems, and more.In automotive applications, the 71V3556SA150BGG8 is used in a variety of applications, including engine control systems, airbag systems, and safety systems. Here, its ability to store data even if there is a power disruption is invaluable in ensuring the safety of passengers.Working Principle of 71V3556SA150BGG8The 71V3556SA150BGG8 is a type of Flash Memory, which uses a form of MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) to store data. The MOSFETs structure of this type of memory eliminates the need for transistors and diodes in the device, which greatly increases its speed and efficiency. The 71V3556SA150BGG8 stores data using a process called Flash-erase. In this process, the memory device is initially blank, but when data is written to it, the bits in the memory device become “flashed,” meaning that the data can be permanently stored in the memory device. The data in the memory device can then be read and written to again as needed.The 71V3556SA150BGG8 also uses a process called “wear-leveling” in order to keep the data stored in the device secure. This process works by randomly distributing data across the device, so that it is spread out evenly and not concentrated in one area. This reduces the chances of data loss and enhances the device’s reliability.ConclusionThe 71V3556SA150BGG8 is a type of non-volatile memory device that is used in a variety of applications, including embedded systems, medical systems, and automotive systems. It utilizes a form of MOSFET technology in order to store data, and its non-volatile memory capabilities make it invaluable in a variety of applications. The 71V3556SA150BGG8 also uses a process called wear-leveling in order to keep the data stored in the device secure.

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