71V3556SA150BQ

Memory plays an important role in computing, storing essential data and driving computing tasks. 71V3556SA150BQ is a type of static random access memory (SRAM) which is a type of computer memory where each bit is stored in a separate circuit. This type of memory is suitable for high speed applications and is usually used in caches and registers in microprocessors. It requires no refreshing, thus greatly increasing the speed of memory operations. The 71V3556SA150BQ SRAM has a synchronous design and is developed for high reliability, performance and low-power operation to meet the demands of high-end embedded and avionics applications.

The 71V3556SA150BQ consists of a setup of multiple separate memory units, each unit consisting of an array of memory cells and associated logic that provides 8 bytes of data bus width, and up to 16 Mbit total capacity. The primary architectural feature of this type of SRAM is the use of a two-transistor memory cell which stores one bit of information. The two transistors are connected in a cross coupled manner and are used as a latch. This latch uses four data lines for reading and writing data. This design provides for a fast access time and is ideally suited for applications that require a large amount of memory.

The 71V3556SA150BQ utilizes a synchronous design and has a very efficient read/write architecture. The clock signals are generated internally, eliminating the need for external clock buffering. The extended temperature range in which the memory modules operate make it an ideal choice for applications where temperature range is critical. Additionally, the memory modules feature proprietary hard power down and low power modes that enable power conservation.

The 71V3556SA150BQ has an operating temperature range of -40 to +85°C and a write/erase cycle life of up to 1 million cycles. These features make the memory ideal for making memory modules for storage of essential data for the purpose of reliable performance over a wide temperature range. The presence of a number of features that help conserve power further make it an ideal choice for applications where power saving is a key factor.

The 71V3556SA150BQ memory is designed for high performance applications, offering fast access speeds, large capacity and high temperature range. The two-transistor memory cell design along with proprietary power saving features make it a reliable choice for applications requiring high speed performances over extended temperature ranges. The choice of extended temperature range, above-average life cycles and large capacity further makes it a perfect choice for applications seeking high performance and reliability.