71V3556SA100BQI Allicdata Electronics
Allicdata Part #:

71V3556SA100BQI-ND

Manufacturer Part#:

71V3556SA100BQI

Price: $ 3.87
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 4.5M PARALLEL 165CABGA
More Detail: SRAM - Synchronous ZBT Memory IC 4.5Mb (128K x 36)...
DataSheet: 71V3556SA100BQI datasheet71V3556SA100BQI Datasheet/PDF
Quantity: 1000
136 +: $ 3.51225
Stock 1000Can Ship Immediately
$ 3.87
Specifications
Write Cycle Time - Word, Page: --
Base Part Number: IDT71V3556
Supplier Device Package: 165-CABGA (13x15)
Package / Case: 165-TBGA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135 V ~ 3.465 V
Memory Interface: Parallel
Access Time: 5ns
Series: --
Clock Frequency: 100MHz
Memory Size: 4.5Mb (128K x 36)
Technology: SRAM - Synchronous ZBT
Memory Format: SRAM
Memory Type: Volatile
Part Status: Active
Packaging: Tray 
Description

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Memory comprises a range of electronic components that store data and instructions for use in applications like computers and micro-controller systems. 71V3556SA100BQI is one such type of memory that functions as a static random access memory (SRAM) module. This article will cover the application field and working principle of this SRAM module.

Application Field

The 71V3556SA100BQI SRAM module is an 8M x 8-bit low power SRAM that offers an operating voltage range of 1.8V to 3.6V. It is designed to operate at a clock frequency ranging from 35MHz to 70MHz. It ensures high performance, lower power dissipation and small package size. The SRAM module is suitable for use in a broad range of embedded applications including those of consumer, industrial and mobile products. It is also an ideal memory device for code storage applications, such as in code storage solutions for micro-controller systems.

Working Principle

71V3556SA100BQI works on the principle of static random access memory (SRAM). SRAM is a type of computer memory that stores data as binary digits (bits) in a data cell for long periods of time. In an SRAM memory cell, two transistors and two capacitors are connected in a cross-saturated electric circuit. When these transistors are in the OFF state, which can be either high or low, the memory cell holds its current data state. The data is only lost when the memory cell is switched to the opposite state. This type of random access memory is known as static because the data is stored in a static format and is not actively refreshed like other types of memory.

The SRAM module uses a synchronous design and incorporates an auto-refresh feature to enable read and write operations without extra clock cycles. The module also comprises an output enable and data strobe function to control the memory output. Read cycle time and write cycle time of the SRAM module occur in 15ns and 26ns respectively. It also supports a write operation that allows only a single byte or all data to be written at once. The SRAM module can also be connected to other memory-mapped devices in an embedded system.

Conclusion

71V3556SA100BQI is a versatile 8M x 8-bit low power SRAM module that can be used in a wide range of embedded applications. It works on the principle of static random access memory where two transistors and two capacitors are connected in a cross-saturated electric circuit. The module supports read and write operations in 15ns and 26ns respectively, and offers an output enable and data strobe function to control the memory output.

The specific data is subject to PDF, and the above content is for reference

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