71V3556SA100BQI8

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Memory

71V3556SA100BQI8 is an important memory device created by Samsung Electronics Co., Ltd. It is integral to the functioning of various electronic devices including mobile phones, digital cameras, computers, and other electronic equipment.

Application Field

This memory device is extensively used in a variety of applications. It is a reliable, high-performance and cost-effective storage solution for systems that require data written and read quickly. This memory device can be found in graphic cards, smartphones, wearable devices, computing systems and servers, automotive applications and portable devices.

71V3556SA100BQI8 memory device also offers faster boot up, multitasking and instant access to data. It is suitable for applications such as gaming, virtual reality, artificial intelligence, cloud computing, and more.

Working Principle

This memory device works on the principle of dynamic random access memory (DRAM). It uses two capacitors and a single transistor per memory cell to store data. A capacitor can store charge and the charge and discharge of this capacitor is controlled by the transistor.

When the voltage is applied to the transistor’s gate, it allows a current to flow through the capacitors. This current will charge the capacitor until it reaches the desired level and then the current will stop. When the voltage is removed from the transistor’s gate, the current will reverse direction and discharge the capacitor until it reaches the desired level. The data stored in the capacitor can then be read.

This memory device is fast and reliable, making it ideal for a variety of applications. It is versatile enough to be used in a variety of systems and provides an efficient storage solution for data that needs to be accessed quickly.

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