71V3577S75BGG Allicdata Electronics
Allicdata Part #:

71V3577S75BGG-ND

Manufacturer Part#:

71V3577S75BGG

Price: $ 3.87
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 4.5M PARALLEL 119PBGA
More Detail: SRAM - Synchronous Memory IC 4.5Mb (128K x 36) Par...
DataSheet: 71V3577S75BGG datasheet71V3577S75BGG Datasheet/PDF
Quantity: 1000
168 +: $ 3.51225
Stock 1000Can Ship Immediately
$ 3.87
Specifications
Write Cycle Time - Word, Page: --
Base Part Number: IDT71V3577
Supplier Device Package: 119-PBGA (14x22)
Package / Case: 119-BGA
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135 V ~ 3.465 V
Memory Interface: Parallel
Access Time: 7.5ns
Series: --
Clock Frequency: 117MHz
Memory Size: 4.5Mb (128K x 36)
Technology: SRAM - Synchronous
Memory Format: SRAM
Memory Type: Volatile
Part Status: Active
Packaging: Tray 
Description

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Today\'s computer systems increasingly rely on memory modules, and integrated circuits and DRAM components are an important part of their production. 71V3577S75BGG belongs to this type of component. This component has many applications in the computer tech industry, but its working principle is not necessarily known by all. This article will look at the 71V3577S75BGG component, its application field and working principle.

Introduction to 71V3577S75BGG

The component 71V3577S75BGG is a 4 Gbyte DDR3B DRAM component. It includes two separate DRAM storage units on a single integrated circuit die, so the component is both highly efficient and extremely cost effective. It has a data transfer rate of up to 2133 megabits per second, and it is built with low power consumption technology. In addition, it is designed with a power-saving mode that can be triggered when the data transfer rate is reduced.

Application Field

The component 71V3577S75BGG is commonly used in the production of high-performance computing systems. It is suitable for applications that require fast data transfer rates for memory-intensive processes, such as data analysis, artificial intelligence, and virtual reality. In addition, it can also be used in data centers, cloud computing platform and other high performance applications.

Working Principle

The 71V3577S75BGG component is an integrated circuit composed of two DRAM cells, one for data storage and the other for data retrieval. When data is retrieved, it is taken through the storage cell and then transferred to the retrieval cell. From here, it is sent to the processor for processing. During this data retrieval process, the power consumption is greatly reduced due to the low power consumption design of the component.

When data is stored, the opposite process occurs. When the data is requested from the processor, it is transferred to the storage cell, and then the retrieval cell retrieves it. During this data retrieval process, the power usage is again low due to the low power consumption design of the component.

The 71V3577S75BGG component is used to store and retrieve data in a computer or other electronic device, and it is highly efficient in its power consumption. In addition, it offers high speed data transfer rates and reliability, making it suitable for a wide range of applications.

Conclusion

The 71V3577S75BGG component is a powerful and reliable 4 Gbyte DDR3B DRAM component. It has many applications in the computer tech industry, and its low power consumption design contributes to its popularity. In addition, its fast data transfer rate and reliable design make it suitable for a wide range of memory-intensive applications.

The specific data is subject to PDF, and the above content is for reference

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