Allicdata Part #: | A2T08VD020NT1-ND |
Manufacturer Part#: |
A2T08VD020NT1 |
Price: | $ 16.51 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | AIRFAST RF POWER LDMOS TRANSISTO |
More Detail: | RF Mosfet LDMOS 48V 40mA 728MHz ~ 960MHz 19.1dB 18... |
DataSheet: | A2T08VD020NT1 Datasheet/PDF |
Quantity: | 1000 |
1000 +: | $ 15.00450 |
Series: | -- |
Part Status: | Active |
Transistor Type: | LDMOS |
Frequency: | 728MHz ~ 960MHz |
Gain: | 19.1dB |
Voltage - Test: | 48V |
Current Rating: | 10µA |
Noise Figure: | -- |
Current - Test: | 40mA |
Power - Output: | 18W |
Voltage - Rated: | 105V |
Package / Case: | 24-QFN Exposed Pad |
Supplier Device Package: | 24-PQFN-EP (8x8) |
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The A2T08VD020NT1 is a key component of the next generation of advanced RF (Radio Frequency) circuitry. It is a type of Field Effect Transistor, or FET, commonly used in the design of high power radio and communications systems. Essentially, this device functions as a switch, transferring the electrical signal from one circuit element to another. Its primary feature is its ability to amplify signals at very low frequencies without introducing distortion.
At the heart of the A2T08VD020NT1 is a substrate, which operates as an electrical insulation layer. On top of this substrate is a source and a drain, which are two metal electrodes acting as ports for the transportation of charge carriers. A gate is also included, which is a layer of insulating material that is placed in between the source and the drain. When a voltage is applied to the gate, the electrical charges begin to move through the substrate, allowing the device to perform its intended operation.
One of the major advantages of the A2T08VD020NT1 is its low power consumption. This is primarily due to its low on-state voltage drop, which is generally about 5 V for a full rated current. This makes the device ideal for use in environments where power consumption is a major consideration, such as broadcast radio systems. Furthermore, the device is highly versatile, being able to handle a wide range of frequencies from DC to 1,000 MHz.
The A2T08VD020NT1 can also be used in a variety of applications. It is particularly well-suited for radio transmission systems, due to its low power consumption and fast switching speed. Additionally, it can be used in RF amplifiers and preamplifiers, due to its wide frequency range. Finally, it can also be used in low-noise applications, such as RF low-noise amplifiers and superhet receivers.
In conclusion, the A2T08VD020NT1 is a highly versatile FET which can be used in a variety of applications. Its low power consumption and wide frequency range make it an ideal choice for radio frequency applications. It is also capable of handling low-noise applications, making it an excellent choice for those looking to maximize their signal-to-noise ratio. Regardless of the application, the A2T08VD020NT1 is well-suited for the task.
The specific data is subject to PDF, and the above content is for reference
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