A2T09VD300NR1

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	LDMOS (Dual)
Frequency:	920MHz
Gain:	21.5dB
Voltage - Test:	48V
Current Rating:	--
Noise Figure:	--
Current - Test:	1.2A
Power - Output:	79W
Voltage - Rated:	105V
Package / Case:	TO-270-6 Variant, Flat Leads
Supplier Device Package:	TO-270WB-6A

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A2T09VD300NR1 application field and working principleA2T09VD300NR1 refers to a field effect transistor or FET with a vertical double diffused structure (which is abbreviated as VDMOS). This type of transistor is typically used in many devices including RF amplifiers and high-frequency switch circuits. It is characterized by low input and output capacitances, high dielectric strength, low resistance and good linearity. Overall, the A2T09VD300NR1 provides good performance and reliability. The device is a small-signal field effect transistor, typically used in applications such as radio-frequency amplifiers and switches. It consists of two metal-oxide-semiconductor (MOS) junctions. The metal-oxide gate and the source-drain junctions are typically formed symmetrically around the drain at the center of the device. This creates a three-terminal device which consist of the gate (G), the drain (D) and the source (S).In operation, the device works like a voltage-controlled resistor. The gate voltage determines the conductivity between the source and the drain by controlling the charge carriers between the two junctions. This is what makes the device so useful in RF switching applications, as it can be used to switch on and off an RF signal while still providing good isolation.The A2T09VD300NR1 has a drain (D) to source (S) breakdown voltage of 300V. This is achieved by using a very thin layer of silicon oxide in between the two junctions. This oxide layer provides insulation, preventing breakdown or current leakage. The high dielectric strength helps ensure a robust design and high contact quality. In summary, the A2T09VD300NR1 is a field effect transistor with an excellent design for RF applications like amplifiers and switches. Its main benefits are low input and output capacitances, high dielectric strength and low resistance which make it very reliable. These features make it ideal for semiconductor production processes, helping ensure the highest quality in circuit designs.

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