Allicdata Part #: | A3T21H360W23SR6-ND |
Manufacturer Part#: |
A3T21H360W23SR6 |
Price: | $ 67.03 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | AIRFAST RF POWER LDMOS TRANSISTO |
More Detail: | RF Mosfet LDMOS (Dual) 28V 600mA 2.11GHz ~ 2.2GHz ... |
DataSheet: | A3T21H360W23SR6 Datasheet/PDF |
Quantity: | 1000 |
150 +: | $ 60.93210 |
Series: | -- |
Part Status: | Active |
Transistor Type: | LDMOS (Dual) |
Frequency: | 2.11GHz ~ 2.2GHz |
Gain: | 16.4dB |
Voltage - Test: | 28V |
Current Rating: | 10µA |
Noise Figure: | -- |
Current - Test: | 600mA |
Power - Output: | 328W |
Voltage - Rated: | 65V |
Package / Case: | ACP-1230S-4L2S |
Supplier Device Package: | ACP-1230S-4L2S |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The A3T21H360W23SR6 is a RF MOSFET (short for Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Toshiba. It’s being used in RF applications such as power amplifiers and switches.
In its simplest form, a transistor is a semiconductor device used to amplify or switch electrical signals. Its basic working principle is that of a switch: when a small current or voltage is applied to its input side, it changes the state of the current flow at its output side, usually providing an amplification. Thus the device can be used to turn the current at its output on and off, or to regulate the current in its output.
A MOSFET, being a type of transistor, has the same basic function, but works differently from a conventional transistor. Instead of controlling the current flow within its structure, it uses a gate voltage which controls the flow of current. Thus, if there is no gate voltage, no current will flow through the device, but once a voltage is applied, the current will be regulated accordingly.
The A3T21H360W23SR6 is a RF MOSFET, meaning it is a MOSFET specifically designed for Radio Frequency applications. It’s most commonly used in power amplifiers and switches. Its excellent frequency response, low noise characteristics, and high current handling capability make it an excellent choice for radio frequency applications.
The A3T21H360W23SR6 features a high voltage tolerance, allowing it to be used in applications that require higher voltages and frequencies than other types of transistor. It also has a high gain, low switching threshold voltage, and fast switching speed, making it suitable for high-speed applications such as Ethernet switching and wireless communication.
In addition to its excellent technical specifications, the A3T21H360W23SR6 is available in a variety of packages, making it suitable for a wide range of applications. It can be used in consumer electronics, automotive applications, industrial electronics, consumer appliances, and military and aerospace systems.
The A3T21H360W23SR6 is an ideal choice for applications that require low noise, high frequency performance, and high current handling capability. Its excellent technical specifications make it a versatile and reliable solution for radio frequency applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
GFX-A3T2-40NST1 | Advantech Co... | 0.0 $ | 1000 | ADD-IN BOARD |
A3T21H360W23SR6 | NXP USA Inc | 67.03 $ | 1000 | AIRFAST RF POWER LDMOS TR... |
A3T21H450W23SR6 | NXP USA Inc | 81.17 $ | 1000 | AIRFAST RF POWER LDMOS TR... |
A3T21H455W23SR6 | NXP USA Inc | 86.64 $ | 1000 | FORECAST ACP1230S-4L2LRF ... |
FET RF 68V 2.16GHZ NI-400RF Mosfet LDMOS...
FET RF 68V 1.99GHZ TO270-4RF Mosfet LDMO...
FET RF 40V 175MHZ TO272-6 WRAPRF Mosfet ...
FET RF 65V 2.17GHZ NI780SRF Mosfet LDMOS...
FET RF 80V 1.6GHZ M243RF Mosfet LDMOS 28...
FET RF 80V 1.6GHZ M243RF Mosfet LDMOS 28...