A3T21H450W23SR6

Series:	--
Part Status:	Active
Transistor Type:	LDMOS
Frequency:	2.11GHz ~ 2.2GHz
Gain:	15.4dB
Voltage - Test:	30V
Current Rating:	10µA
Noise Figure:	--
Current - Test:	600mA
Power - Output:	87W
Voltage - Rated:	65V
Package / Case:	ACP-1230S-4L2S
Supplier Device Package:	ACP-1230S-4L2S

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Introduction

The A3T21H450W23SR6 is a MOSFET (Metal-Oxide Semiconductor Field-Effect Transistor) with an operating frequency of 450MHz and a peak voltage of 12V in the Radio Frequency (RF) range. It is the most commonly used MOSFET in this range, as it offers superior performance for both signal amplification and switching applications. In this article, we will take a look at the application field and working principle of this device.

Application Field

The A3T21H450W23SR6 MOSFET is typically used in RF applications that require high levels of performance. It is often used in antenna systems, power amplifiers, and signal processing equipment such as filters, mixers, and modulators. Due to its excellent power handling capabilities, it is also used in high-power RF applications such as radar transmitters and cell phone base station amplifiers. It is also used in low-noise amplifiers and linear amplifiers that require dynamic range and linearity.

Working Principle

The A3T21H450W23SR6 MOSFET is based on the principle of electron motion. Electrons flowing in a semiconductor material are affected by an external electric field. This electric field can be applied to the gate of the MOSFET, which in turn will affect the flow of electrons in the semiconductor material. This produces a voltage drop across the MOSFET, which affects the current flow in the circuit. In order for the MOSFET to work properly, it needs to be biased in the “on” state. This is accomplished by applying a positive voltage to the gate of the MOSFET. The gate voltage is then used to control the current flow in the device. The current flow is directly proportional to the gate voltage and can be used to modulate the output power of the device.

Conclusion

The A3T21H450W23SR6 MOSFET is a versatile device with a wide range of applications in the RF range. Its high power handling capabilities and superior performance make it an ideal choice for high-power applications. Its easy to use gate structure also makes it well suited for signal processing equipment. Understanding the application field and working principle of the A3T21H450W23SR6 will enable engineers to fully utilize its potential and maximize its effectiveness.

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