ACZRC5359B-G

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

ACZRC5359B-G Diodes - Zener – Single Application Field and Working Principle

ACZRC5359B-G is a semiconductor device usually used in the fields of digital, analog, and power electronics. It is a single Zener diode, which has low reverse leakage and a tight temperature coefficient. ACZRC5359B-G is a combination of PNP and NPN transistors, forming a construction with two diodes, each of which is responsible for the normal functioning of the device. The PNP transistor is used as a connection element between the two diodes, providing them with a stable biasing point for their stable operation.

The Zener voltage of ACZRC5359B-G is stable and can be adjusted with 28V Zener to the desired level. The maximum power consumption of this device is limited to the watt five watt region by 7.5mA per diode, with the help of up to four diode structures. Thanks to its high working frequency potential, ACZRC5359B-G can work at up to 500 MHz, allowing it to be used in various applications such as digital design, power supply design, and data communication. The operating temperature for this device is specified at -40 to +85 degree Celsius.

The working principle of ACZRC5359B-G is simple. It has two terminals namely anode and cathode. The anode is the higher voltage terminal and the cathode is the lower voltage terminal. When the voltage applied to the anode is greater than the Zener breakdown voltage, electrons from the anode will flow to the cathode via the PN junction, forming a forward biased diode. The electron flow will transfer energy to the junction forming a potential barrier that blocks electron flow in the reverse direction. This is known as Zener breakdown.

The Zener breakdown voltage determines the maximum voltage that can be applied to the anode before the diode will enter breakdown, and it is specified by the manufacturer. If the voltage applied to the anode exceeds the breakdown voltage, the device will switch into reverse bias Zener current mode. In this mode, the excess current is transferred through the PNP junction and dissipated as heat in the semiconductor. This reverse bias Zener current is limited by the reverse leakage current.

ACZRC5359B-G can also be used as an over-voltage protection device. In this mode, it will provide protection from voltage spikes within an over-voltage threshold. The diode acts as a clamp, clamping any over-voltage spike to a predetermined level.

In summary, ACZRC5359B-G is a very versatile device that can be used for numerous applications in power electronics, and digital, analog, and data communication. It is a combination of two Zener diodes, each providing a low reverse leakage and a tight temperature coefficient. The Zener voltage and the breakdown voltage can be adjusted to the desired level, while the power consumption is limited to the watt five watt region. The device can work at up to 500 MHz, and it is specified at -40 to +85 degree Celsius.

The specific data is subject to PDF, and the above content is for reference