ACZRM5229B-HF

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ACZRM5229B-HF is a diodes - zener - single device from NXP Semiconductors. It has a low voltage of 5.6 volts, a small form factor of 1.1 by 0.6 inches, and a maximum power dissipation rating of 500 mW. This device has a zener breakdown voltage of 5.6 volts.

ACZRM5229B-HF has a wide variety of applications. It can be used as an ESD protection device and as a voltage reference. It can also be used in battery-operated devices, such as CMOS and digital logic ICs, RF circuits, and in automotive systems. In addition, ACZRM5229B-HF can be used in industrial, military, and aerospace applications. It is commonly used in voltage regulation, power supplies, and overload protection.

The working principle of ACZRM5229B-HF is based on the Zener diode. When forward biased, the diode does not conduct electric current. However, when reverse bias is applied, the device will conduct current. The Zener diode has a constant voltage that is determined by the device’s breakdown voltage. The breakdown voltage defines the maximum reverse bias voltage where the device conducts electric current with a high level of reliability.

When a high voltage is applied to ACZRM5229B-HF, it will “breakdown” and conduct current until the voltage drops below the Zener voltage of 5.6 volts. This allows the device to be used as a voltage reference. It is also a very effective ESD protection device as it provides a low impedance path to ground when activated.

ACZRM5229B-HF is an excellent device for applications that require low voltage and high level of reliability. It is widely used in a variety of applications, including voltage regulation, ESD protection, overload protection, and as an effective voltage reference. Its small form factor and high power dissipation ratings make it ideal for use in battery-operated and automotive applications.

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