AO4354_101 Allicdata Electronics
Allicdata Part #:

AO4354_101-ND

Manufacturer Part#:

AO4354_101

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Alpha & Omega Semiconductor Inc.
Short Description: MOSFET N-CH 30V 8SOIC
More Detail: N-Channel 30V 23A (Ta) 3.1W (Ta) Surface Mount 8-S...
DataSheet: AO4354_101 datasheetAO4354_101 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.1W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2010pF @ 15V
Vgs (Max): ±20V
Series: AlphaMOS
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 3.7 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Last Time Buy
Description

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AO4354_101 is an advanced n-channel enhancement-mode power MOSFET (metal-oxide-semiconductor field-effect transistor) produced by Advanced Power Technology Inc. This MOSFET device is available in a TO-252, Exposed Pad package. It is commonly used in industry-standard applications, such as motor control, power switching, and voltage regulation.

The AO4354_101 features excellent RDS(ON) with low gate charge and can deliver up to 20 A of continuous channel current. It has a low gate turn-on voltage (3.3 V) and a low gate capacitance of 4.4 nF. The device is optimized for use in high-efficiency, low-gate charge, and high-frequency applications, where power loss and system cost can be reduced.

The AO4354_101 device is a MOSFET that uses a metal-oxide-semiconductor gate to control the flow of electrons between the source and the drain. The device works by having a reverse-biased junction, so that when the gate voltage is increased, the source-drain channel opens up and a current is allowed to flow through. When the gate voltage is decreased, the source-drain channel closes and the current stops flowing through the device. This makes the MOSFET an ideal switch for various applications.

The AO4354_101 is ideal for applications requiring low on-state resistance and fast switching. It can operate at frequencies up to 3 MHz and has a very low total gate charge (Qg) of 4.4 nC. This makes the AO4354_101 a very efficient device compared to other MOSFETs and is commonly used in high-efficiency applications where power dissipation is a critical factor.

The AO4354_101 is suitable for a variety of applications, including motor controls, DC-DC converters, resonant DC-DC converters, and other power switching purposes. The device is capable of operating at high frequencies and is suitable for high-efficiency power conversion applications. The MOSFET is also used in automotive, consumer electronics, and aerospace applications.

In summary, the AO4354_101 is an advanced n-channel enhancement-mode power MOSFET with excellent RDS(ON), low gate charge, and low gate turn-on voltage. The device is well suited for high-efficiency applications and is commonly used for motor control, power switching, and voltage regulation. The device is also suitable for a wide range of other applications, making it a versatile and cost-effective solution for many applications.

The specific data is subject to PDF, and the above content is for reference

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