AO4576 Discrete Semiconductor Products |
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Allicdata Part #: | 785-1465-2-ND |
Manufacturer Part#: |
AO4576 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET N-CH 30V 20A 8SOIC |
More Detail: | N-Channel 30V 20A (Ta) 3.1W (Ta) Surface Mount 8-S... |
DataSheet: | AO4576 Datasheet/PDF |
Quantity: | 18000 |
Vgs(th) (Max) @ Id: | 2.2V @ 250µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SOIC |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3.1W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 951pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 22.5nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 5.8 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 20A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The AO4576 is a field effect transistor (FET), a single enhancement-mode lateral MOSFET that is specifically designed for use in high power, low voltage applications. It is ideal for use in switching and power management applications, especially when higher switching frequencies and lower conduction losses are desired.
The AO4576 has a wide range of features that make it an attractive solution for use in a variety of applications: it has an integrated current sensing diode, a wide voltage range, excellent ESD protection, good impedance control, and low power dissipation.
AO4576’s application field involves the use of MOSFETs that are capable of switching large currents while operating in low voltage. It is an excellent choice for medium-frequency AC/DC power supplies, DC/DC converters, lighting and consumer electronics applications. It is also suitable for high frequency switching applications such as Class D amplifiers and mobile communications power amplifiers.
The AO4576\'s working principle relies on the use of a metal-oxide semiconductor. A MOSFET is a three-terminal device consisting of a metal gate sandwiched between a semiconductor substrate and a metal. When the metal gate is charged, it creates a field effect that attracts electrons from the substrate and makes the transistor turn on.
The metal gate controls the MOSFET’s switching behavior; when it is in the off-state, the transistor is off and when it is in the on-state, the transistor is on. The metal gate also regulates the voltage between the source and drain, allowing the MOSFET to work in high-voltage applications.
The AO4576 transistor also has some unique features that make it ideal for switching applications. First, its integrated current sensing diode allows the FET to detect and limit overcurrent conditions. Additionally, the diode control feature allows the MOSFET to operate with lower on-resistance and improved power efficiency in comparison to other transistors.
Finally, the physical design of the AO4576 makes it highly compact and reliable. Its compact size allows it to fit into tight packages and its reinforced back gate ensures reliability and stability in a variety of environments.
In summary, the AO4576 is an ideal solution for use in switching and power management. Its wide range of features, coupled with its low-voltage capabilities, make it an excellent choice for applications in medium-frequency AC/DC power supplies, DC/DC converters, lighting and consumer electronics.
The specific data is subject to PDF, and the above content is for reference
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