Allicdata Part #: | 785-1538-2-ND |
Manufacturer Part#: |
AOB7S65L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET N-CH 650V 7A TO263 |
More Detail: | N-Channel 650V 7A (Tc) 104W (Tc) Surface Mount TO-... |
DataSheet: | AOB7S65L Datasheet/PDF |
Quantity: | 1000 |
Series: | aMOS™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 650V |
Current - Continuous Drain (Id) @ 25°C: | 7A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 650 mOhm @ 3.5A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 9.2nC @ 10V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 434pF @ 100V |
FET Feature: | -- |
Power Dissipation (Max): | 104W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | TO-263 (D²Pak) |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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AOB7S65L is a type of power MOSFET, which stands for metal oxide semiconductor field effect transistor. This device, like other MOSFETs, is used in power switching applications in which high efficiency, fast switching, and high density are desired.
AOB7S65L is specially designed for applications that require high condition conduction current and voltage. Its low gate drive capability allows ease of use during operation and makes it a great choice for applications that need low gate drive current but still have a higher current requirement. Furthermore, this MOSFET has a built-in ESD protection which helps to protect the device when subjected to higher electricity spikes.
The main feature of this MOSFET is its maximum continuous drain current and maximum continuous drain-source voltage which can reach up to 6.5A and 65V respectively. In addition, the device has an internal capacitance that can reach up to 5.5nF; this makes it ideal for high frequency switching applications such as DC/DC converters. Additionally, the high switching speeds of the AOB7S65L (totem-pole-configured on-state drain-source voltage of 250V/ns) makes it a great choice for power management designs.
As far as the working principle of this MOSFET is concerned, it is based on three main principles. These are the Gate, Source, and Drain. In this device, the Gate acts as a control element. Applying a positive voltage to the gate results in a conductive path between the source and drain. But a negative voltage can reverse this effect, allowing the device to be completely turned off. The main advantage of the Gate-Source-Drain configuration is that it can provide very high currents and voltages.
Another key feature of the AOB7S65L is its overall thermal resistance. Its maximum junction to case rating is 2.0°C/W which makes it able to handle higher junction temperatures. This shows that this device can survive in harsh environments and is reliable for a range of applications such as power converters, power switches, and power management circuits.
The AOB7S65L is most commonly used in power switching applications. Its high efficiency, fast switching time, and high current capability are some of the reasons why it is used in such applications. Its ability to maintain low power loss, along with its low on-resistance and low gate voltage drive, makes this MOSFET an ideal choice for high-efficiency designs.
In conclusion, the AOB7S65L is an excellent choice for power switching applications due to its high current, high voltage, and low thermal resistance. Its low gate drive requirement, coupled with its high switching speed, makes it suitable for use in high-speed switching applications. Furthermore, its built-in ESD protection gives it added protection against voltage spikes.
The specific data is subject to PDF, and the above content is for reference
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