AOD8N25 Allicdata Electronics
Allicdata Part #:

785-1361-2-ND

Manufacturer Part#:

AOD8N25

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Alpha & Omega Semiconductor Inc.
Short Description: MOSFET N CH 250V 8A TO252
More Detail: N-Channel 250V 8A (Tc) 78W (Tc) Surface Mount TO-2...
DataSheet: AOD8N25 datasheetAOD8N25 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4.3V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252, (D-Pak)
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Power Dissipation (Max): 78W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 306pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 560 mOhm @ 1.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drain to Source Voltage (Vdss): 250V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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AOD8N25 is a 25-volt, 8-amp Power MOSFET (Metal-Oxide Semiconductor Field-Effect Transistor) device. MOSFETs have become the most popular and widely used device technology in the electronics industry because of their low power and low cost. AOD8N25 is suitable for switching applications and offers superior performance compared to other MOSFET technologies.

The AOD8N25 is a MOSFET device with P-channel enhancement mode, which means that it operates under negative gate-source voltage. It offers low on-resistance, low gate and drain capacitances resulting in superior switching performance for high-speed switching applications. The AOD8N25 also has low leakage current, making it ideal for power supplies, converters, and motor control applications.

The AOD8N25 has two terminals, the gate and the drain. In order to operate, the gate must be supplied with a logic-level voltage that is greater than the device threshold voltage (Vth). When the gate is supplied with a voltage that is greater than the threshold voltage (Vgs > Vth), the device is turned ON and allows current to flow between the source and the drain. The drain current is controlled by the gate voltage; the higher the gate voltage is, the higher the drain current will be.

The current flow between the source and drain occurs when the positive gate voltage is applied to the gate terminal and the device is in enhancement mode. The mobility of electrons across the oxide layer is enhanced when a large enough electric field exists from the gate to the drain. When a large enough electric field is present, the drain receives an increased number of electrons, and as a result, increases the drain current. The source current is also directly proportional to the drain current.

The AOD8N25 can be used in a variety of applications where high power, low noise, and low cost are desirable. The device can be used as a switch in a voltage regulator, in a motor controller, or in power supplies. Additionally, since the AOD8N25 is operated in enhancement mode, the device will consume almost no power when it is in the OFF state, making it ideal for low power applications. The device also has low gate and drain capacitances, allowing it to switch faster than other types of MOSFETs.

The AOD8N25 is a reliable, low-cost solution for many applications where high power and low noise are required. The device is suitable for a wide range of switching applications, from low-end consumer electronics to high-end industrial applications. The device is also easy to use, and its low gate and drain capacitances allow it to switch faster than other types of MOSFETs.

The specific data is subject to PDF, and the above content is for reference

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