Allicdata Part #: | 785-1536-5-ND |
Manufacturer Part#: |
AOI1N60L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET N-CH 600V 1.3A TO251A |
More Detail: | N-Channel 600V 1.3A (Tc) 45W (Tc) Through Hole TO-... |
DataSheet: | AOI1N60L Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
Package / Case: | TO-251-3 Stub Leads, IPak |
Supplier Device Package: | TO-251A |
Mounting Type: | Through Hole |
Operating Temperature: | -50°C ~ 150°C (TJ) |
Power Dissipation (Max): | 45W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 160pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 8nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 9 Ohm @ 650mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 1.3A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The AOI1N60L is a single enhancement-mode (normally-off) silicon-gate MOSFET transistor with a low gate-to-source capacitance. It has a wide range of applications in varying fields. This article will discuss the uses of the AOI1N60L and its working principle.
Application Field of the AOI1N60L
The AOI1N60L is a versatile MOSFET that is suitable for a variety of applications. As a general purpose switching device, it is commonly used in power supplies and other power electronic circuitry, where it can be used to efficiently switch currents up to 135A.
In mobile phones and other consumer devices, the AOI1N60L can be used for call switching and circuit protection. Additionally, it is well-suited for high frequency speed switching in memory devices and can be used as an analog switch in audio circuits. It can also be used as an efficient gate drive to power MOSFETs in power factor correction (PFC) circuits.
Working Principle of the AOI1N60L
The AOI1N60L uses a P-channel enhancement-mode MOSFET, meaning that the transistor is normally off. In order to turn the transistor on, a threshold voltage must be applied to the gate-source junction. This will then cause a current to flow through the channel between the source and drain terminals.
The channel of the AOI1N60L is closed when no voltage is applied, and no current flows through the device. When a voltage is applied, the channel opens and a current flows through it. The current flow through the AOI1N60L is determined by how much voltage is applied to the gate-source junction.
At higher voltages, the current that flows through the AOI1N60L will increase exponentially. This makes the AOI1N60L an excellent choice for switching applications, where high currents need to be switched quickly, efficiently, and with minimal loss.
The AOI1N60L also has a low gate-to-source capacitance, which means that it can switch very high frequencies without suffering from excessive power loss. This makes it an ideal choice for applications such as RF switching and audio circuits.
Conclusion
The AOI1N60L is a single enhancement-mode P-channel MOSFET transistor with a low gate-to-source capacitance. It is commonly used in power electronics and consumer devices such as mobile phones and audio circuits. It is also well-suited for high frequency switching applications due to its low gate-to-source capacitance and its ability to switch high currents at high frequencies with minimal power loss.
The specific data is subject to PDF, and the above content is for reference
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