AOI8N25

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AOI8N25 Application Field and Working Principle

AOI8N25 is a type of Single Enhancement-Mode Field Effect Transistor (FET). It is a power MOSFET transistor that has both low on-resistance and high maximum drain-source breakdown voltage, making it suitable for applications requiring both high current and high voltage. Due to its low on-resistance, it is commonly used for power conversions and is ideally suited for applications where a high switching speed is required.

Characteristics

AOI8N25 is a high-performance N-channel MOSFET capable of handling high power and high voltage. It has an on-resistance of 8.0 ohms while its breakdown voltage is a maximum of 150V. Its gate-source voltage is rated at 2.5V, while its minimum gate-source voltage is 0 volts. The gate drain capacitance of this device is approximately 4.5pF, and gate-drain charge is 65nC. Its package footprint size is a typically TO-220AB, or can also be found in a tiny, surface-mount D-PAK.

The device can handle a continuous drain-source current of 8 A, as well as a pulsed current of up to 30 A. It is designed for operation at temperatures from -55 to 150 degrees Celsius and is capable of switching frequencies of up to 5 MHz. The device also features a very low thermal resistance. It is packaged in a space-saving surface mount package and is exceptionally rugged.

Applications

AOI8N25 is a suitable device for use in switching power converters. It is well suited for high-current and high-voltage power conversion applications, such as dc-dc converters, inverters, and modified sinusoidal waveform inverters. Additionally, its enhanced performances compared to equivalent MOSFETs make it especially suitable for high-frequency switching applications, such as those found in computers, communication, and networking equipment.

The device has a wide range of applications, such as motor control, power supply regulation, power switching, and low-voltage battery-powered applications. It is also well suited for automotive, aerospace, and industrial applications. Due to its reliability and low on-resistance, it is an excellent choice for high-current, high-power applications.

Working Principle

AOI8N25 is a type of n-channel enhancement-mode MOSFET, meaning it requires only a small gate voltage to turn the transistor on. When a positive voltage is applied to the gate relative to the source, electrons in the substrate are attracted to the gate-oxide region, forming a conductive channel in the semiconductor material. This creates a low resistance path between the drain and the source. This low resistance path allows large amounts of current to flow through when a voltage is applied across the drain and the source.

When the gate voltage is reduced or removed, the conductive channel disappears, effectively blocking current flow between the drain and the source, turning the device off. This is how the device is used in power conversion and switching applications. It is able to rapidly switch between its high and low states, allowing it to control a current flowing in one direction.

The low on-resistance and high-voltage breakdown of the AOI8N25 makes it ideal for a variety of applications, particularly those that require a high switching speed. The device’s ability to operate at high frequencies also makes it suitable for digital switching applications. Its high reliability makes it suitable for use in automotive and industrial applications.

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