AOK18N65L Allicdata Electronics
Allicdata Part #:

785-1589-5-ND

Manufacturer Part#:

AOK18N65L

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Alpha & Omega Semiconductor Inc.
Short Description: MOSFET N-CH 650V 18A TO247
More Detail: N-Channel 650V 18A (Tc) 417W (Tc) Through Hole TO-...
DataSheet: AOK18N65L datasheetAOK18N65L Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tube 
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 390 mOhm @ 9A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 3785pF @ 25V
FET Feature: --
Power Dissipation (Max): 417W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247
Package / Case: TO-247-3
Description

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The AOK18N65L is an n-channel enhancement-mode field-effect transistor (FET) designed for applications where low on-resistance and latest technology performance are essential. It offers a combination of features that allows designers to optimize the performance characteristics of their applications. This FET device is designed to deliver best-in-class on-resistance across a wide range of Vds and temperature. It\'s high on-time and low on-resistance make it suitable for a variety of applications, including voltage regulators and power switches.

The AOK18N65L is composed of two main components, a monolithic MOSFET (metal-oxide semiconductor field-effect transistor) and a high-voltage MOSFET. The monolithic MOSFET is a high-performance device with a low on-resistance and increased power-switching capability. The high-voltage MOSFET is employed to enable the device to be used in high-voltage applications up to a maximum of 650 volts. It also offers improved Rds(on) characteristics.

The AOK18N65L is designed to operate in enhancement-mode and has good gain, fast switching speed, and good thermal stability. It also offers excellent noise immunity, allowing it to be used in applications in which audio signals may be present. It has an Avalanche energy rating of 117 mJ and its Gate-Source maximum voltage is +/-25V.

The AOK18N65L has a maximum on-state resistance of 0.15 ohms at 10V Vds, which ensures high efficiency in the application. It is suitable for both low- and high-side switch applications. For high-side switch applications, the AOK18N65L has a built-in body diode to enable current flow from the drain to the source. For low-side switch applications, it has a low RDS(on) providing good efficiency.

The AOK18N65L has a wide operating temperature range of -55 °C to +150 °C, enabling it to be used in a variety of applications. A low "Gate Charge" feature makes the device ideal for switching applications, where a good response time is essential. The AOK18N65L output characteristics are well-suited to driving loads such as motors, relays, and loads that require a high inrush current.

In addition to its excellent on-resistance figures, the AOK18N65L also has a wide safe-operating area. This parameter defines the current, voltage and temperature parameters within which the device can be operated safely. It also has a thermal shutoff capability which automatically shuts off the device in case of excessive temperature. The device also has a built-in protection diode which helps protect the device from electrostatic discharge and other voltage transients.

The AOK18N65L is an easy-to-use, cost-effective and reliable solution for a variety of applications. It offers a combination of features that make it an ideal choice for designers looking to optimize the performance characteristics of their applications without sacrificing cost or performance. Its high-power switching and low "Gate Charge" feature make it an attractive solution for a variety of applications. It is also an excellent choice for applications where audio signals may be present.

The specific data is subject to PDF, and the above content is for reference

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