Allicdata Part #: | 785-1450-5-ND |
Manufacturer Part#: |
AOK8N80L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET N-CH 800V 7.4A TO247 |
More Detail: | N-Channel 800V 7.4A (Tc) 245W (Tc) Through Hole TO... |
DataSheet: | AOK8N80L Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 245W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1650pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 32nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 1.63 Ohm @ 4A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 7.4A (Tc) |
Drain to Source Voltage (Vdss): | 800V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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AOK8N80L is a type of MOSFET (Metal Oxide Semiconductor Field-Effect Transistor), a type of transistor that has been in use since the late 1960s. It is a high-side N-channel MOSFET device, meaning it is of the field-effect type and is constructed from a semiconductor material with a metal-oxide layer on the gate. The name of the device comes from the metal oxide layer, which is an insulator and serves as a gate between the source and drain terminals.
The AOK8N80L offers a combination of low on-resistance, high input capacitance and low gate charge. It has a maximum drain-source voltage of 500V, an energy-efficient switching speed of 8.0V, an on-resistance of 0.076Ω, an input capacitance of 22.45nF and a total gate capacitance of 220pF. It also features a reverse-bias safe operating area (RBSOA), allowing the device to be used safely and reliably in high-side switch applications.
The AOK8N80L is suitable for many applications, ranging from motor control to lighting to audio switching and more. Because it is a high-side MOSFET device, it can be used in a variety of applications where control of the drain-source voltage is required. It can also be used in more specialized applications, such as pulse-width modulation (PWM) switching, low-loss buck converters and low-side gate drivers.
The AOK8N80L works by modulating the voltage across its gate-source terminal. When the gate-source voltage is positive, the transistor will be \'on\' and the current will flow freely between the source and drain terminals. When the gate-source voltage is negative, the transistor will be \'off\' and no current will flow.
The AOK8N80L is a versatile device, offering low on-resistance, good switching performance and high stability in reliable and energy-efficient applications. It is suitable for a wide range of uses and applications, from high-side switch applications to motor control and audio switching. Thanks to its reverse-bias safe operating area and high input capacitance, it is an ideal device for these applications and can help to ensure reliable and safe operation.
The specific data is subject to PDF, and the above content is for reference
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